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參數(shù)資料
| 型號(hào)： | M29F105B |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 1Mbit (64Kb x16, Block Erase) Single Supply Flash Memory(1Mb閃速存儲(chǔ)器) |
| 中文描述： | 為1Mbit（64Kb的x16插槽，塊擦除）單電源閃存存儲(chǔ)器（1MB閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 2/28頁(yè) |
| 文件大?。?/td> | 200K |
| 代理商： | M29F105B |
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Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
(3)
–40 to 85
°
C
T
BIAS
Temperature Under Bias
–50 to 125
°
C
T
STG
V
IO(2)
Storage Temperature
–65 to 150
°
C
Input or Output Voltages
–0.6 to 7
V
V
CC
Supply Voltage
–0.6 to 7
V
V
(A9, E, G)
(2)
A9, E, G Voltage
–0.6 to 13.5
V
Notes:
1. Except for the rating”O(jiān)perating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings”
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections ofthis specificationis notimplied. Exposure to AbsoluteMaximum
Rating conditions for extended periods may affectdevice reliability.Refer also to the STMicroelectronics SURE Program and other
relevantquality documents.
2. Minimum Voltagemay undershoot to –2V during transition and for less than 20ns.
3. Depends on range.
Table 2. Absolute MaximumRatings
(1)
DQ15
NC
E
DQ12
DQ13
DQ11
A13
A14
VCC
NC
W
A5
A6
A7
A8
DQ0
DQ1
DQ2
DQ3
A2
A3
A1
DQ4
DQ5
A0
DQ8
DQ9
DQ6
DQ7
DQ10
VSS
A10
A11
A12
A9
VSS
AI02116
M29F105B
10
11
1
20
21
30
31
40
A4
A15
DQ14
G
Figure 2. TSOPPin Connections
Warning:
NC = Not Connected.
DESCRIPTION
The M29F105Bis a non-volatilememorythat may
be erasedelectricallyat theblock or chiplevel and
programmed in-system on a Word-by-Word basis
using onlya single 5V V
CC
supply.Word program-
ming takestypically 20
μ
s. For Programand Erase
operationsthe necessaryhigh voltagesare gener-
ated internally. The device can also be pro-
grammed in standardprogrammers.
The arraymatrix organisationallows eachblockto
be erased and reprogrammed without affecting
otherblocks. Blockscan be protectedagainstpro-
graming and erase on programming equipment
andintheapplication.Theycanalsobetemporarily
unprotected.Each block can be programmed and
erased over 100,000 cycles.
Blockerase isperformedin typically1.0 secondfor
the main blocks.
Instructions for Read/Reset,Auto Select for read-
ing the Electronic Signature or Block Protection
status,Programming,BlockandChipErase,Erase
Suspend and Resume Block Protect and Blocks
Unprotect are written to the device in cycles of
commands to a Command Interface using stand-
ard microprocessorwrite timings.
The device is offered in TSOP40 (10 x 14mm)
packages.
Organisation
The M29F105B is organised as 64K x16 bits. The
memory uses the address inputs A0-A15 and the
DataInput/OutputsDQ0-DQ15. Memorycontrol is
provided by Chip Enable E, Output Enable G and
Write Enable W inputs.
2/28
M29F105B
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