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參數(shù)資料
| 型號： | M29F200B |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 2Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory(2M位閃速存儲器) |
| 中文描述： | 2Mbit的（256Kb的x8或128KB的x16插槽，引導(dǎo)塊）單電源快閃記憶體（200萬位閃速存儲器） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 24K |
| 代理商： | M29F200B |
B29F200/807
Completedata availableon
DATA-on-DISCCD-ROM
orat
www.st.com
1/3
M29F200T
M29F200B
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)
Single Supply Flash Memory
DATABRIEFING
5V
±
10% SUPPLYVOLTAGEfor PROGRAM,
ERASE and READOPERATIONS
FASTACCESS TIME: 55ns
FASTPROGRAMMING TIME
– 10
μ
s by Byte / 16
μ
s byWord typical
PROGRAM/ERASECONTROLLER (P/E.C.)
– ProgramByte-by-Byteor Word-by-Word
– StatusRegister bits and Ready/BusyOutput
MEMORYBLOCKS
– BootBlock (Top or Bottomlocation)
– Parameterand Main blocks
MULTI-BLOCKPROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program anotherBlockduring
Erase Suspend
LOW POWER CONSUMPTION
– Stand-byand AutomaticStand-by
100,000 PROGRAM/ERASECYCLES per
BLOCK
20 YEARSDATARETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– ManufacturerCode: 0020h
– Device Code, M29F200T:00D3h
– Device Code, M29F200B:00D4h
DESCRIPTION
The M29F200 is a non-volatile memory that may
be erasedelectricallyat theblock or chipleveland
programmedin-systemona Byte-by-Byteor Word-
by-Word basis using only a single 5V V
CC
supply.
For Program and Erase operationsthe necessary
high voltages are generatedinternally. The device
can also be programmed in standard program-
mers.
The arraymatrix organisationallows each blockto
be erased and reprogrammed without affecting
otherblocks. Blocks can be protectedagainst pro-
graming and erase on programming equipment,
and temporarily unprotected to make changes in
the application.
AI01986
17
A0-A16
W
DQ0-DQ14
VCC
M29F200T
M29F200B
E
VSS
15
G
RP
DQ15A–1
BYTE
RB
Logic Diagram
44
1
SO44 (M)
TSOP48 (N)
12 x 20 mm
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|---|---|
| M29F200BB45M1 | 功能描述:閃存 RO 511-M29F200BB70M RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F200BB45N1 | 功能描述:閃存 256Kx8 or 128Kx16 45 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F200BB50M3 | 制造商:Micron Technology Inc 功能描述: |
| M29F200BB50N3 | 功能描述:閃存 256Kx8 or 128Kx16 50 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F200BB70M1 | 功能描述:閃存 256Kx8 or 128Kx16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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