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參數(shù)資料
| 型號： | M29F100-T70M3TR |
| 廠商： | 意法半導體 |
| 元件分類： | FLASH |
| 英文描述： | 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
| 中文描述： | 1兆位的128KBx8或64Kbx16，有啟動區(qū)域的單電源閃存 |
| 文件頁數(shù)： | 5/30頁 |
| 文件大?。?/td> | 207K |
| 代理商： | M29F100-T70M3TR |
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Symbol
Parameter
Test Condition
Min
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VCC
±1
A
ILO
Output Leakage Current
0V
≤ VOUT ≤ VCC
±1
A
ICC1
Supply Current (Read) TTL Byte
E = VIL,G= VIH, f = 6MHz
20
mA
ICC1
Supply Current (Read) TTL Word
E = VIL,G= VIH, f = 6MHz
20
mA
ICC2
Supply Current (Standby) TTL
E = VIH
1mA
ICC3
Supply Current (Standby) CMOS
E = VCC
± 0.2V
100
A
ICC4
(1)
Supply Current (Program or Erase)
Byte program, Block or
Chip Erase in progress
20
mA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
2
VCC + 0.5
V
VOL
Output Low Voltage
IOL = 5.8mA
0.45
V
VOH
Output High Voltage TTL
IOH = –2.5mA
2.4
V
Output High Voltage CMOS
IOH = –100
AVCC –0.4V
V
VID
A9 Voltage (Electronic Signature)
11.0
12.0
V
IID
A9 Current (Electronic Signature)
A9 = VID
100
A
VLKO
Supply Voltage (Erase and
Program lock-out)
3.2
4.2
V
Note: 1. Sampled only, not 100% tested.
Table 13. DC Characteristics
(TA = 0 to 70
°C, –40 to 85°C or –40 to 125°C; VCC =5V ± 10%)
During the executionof the erase by the P/E.C., the
memory accepts only the Erase Suspend ES and
Read/Reset RD instructions. Data Polling bit DQ7
returns ’0’ while the erasure is in progress and ’1’
when it has completed. The Toggle bit DQ2 and
DQ6 toggle during the erase operation. They stop
when erase is completed. After completion the
Status Register bit DQ5 returns ’1’ if there has been
an erase failure. In such a situation, the Toggle bit
DQ2 can be used to determine which block is not
correctly erased. In the case of erase failure, a
Read/Reset RD instruction is necessary in order to
reset the P/E.C.
Chip Erase (CE) Instruction. This instruction uses
six write cycles. The Erase Set-up command 80h
is written to address AAAAh in the Byte-wide con-
figuration or the address 5555h in the Word-wide
configuration on the third cycle after the two Coded
cycles. The Chip Erase Confirm command 10h is
similarly written on the sixth cycle after anothertwo
Coded cycles. If the second command given is not
an erase confirm or if the Coded cycles are wrong,
the instruction aborts and the device is reset to
Read Array. It is not necessaryto programthe array
with 00h first as the P/E.C. will automatically do this
before erasing it to FFh. Read operations after the
sixth rising edge of W or E output the Status
Register bits. During the execution of the erase by
the P/E.C., Data Polling bit DQ7 returns ’0’, then ’1’
on completion. The Toggle bits DQ2 and DQ6
toggle during erase operation and stop when erase
is completed. After completion the Status Register
bit DQ5 returns ’1’ if there has been an Erase
Failure.
13/30
M29F100T, M29F100B
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| M29F100T-90M1 | 功能描述:閃存 ALT 511-M29F100BT90M 128KX8 OR 64KX16 90N RoHS:否 制造商:ON Semiconductor 數(shù)據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F102B45K1 | 制造商:STMicroelectronics 功能描述: |
| M29F102BB35K1 | 功能描述:閃存 PLCC-44 64KX16 35NS RoHS:否 制造商:ON Semiconductor 數(shù)據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F102BB35N1 | 功能描述:閃存 1M (64Kx16) 35ns RoHS:否 制造商:ON Semiconductor 數(shù)據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F102BB45K1 | 功能描述:電可擦除可編程只讀存儲器 1M (64Kx16) 45ns RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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