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參數(shù)資料
| 型號： | M29F100-T70M3TR |
| 廠商： | 意法半導體 |
| 元件分類： | FLASH |
| 英文描述： | 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
| 中文描述： | 1兆位的128KBx8或64Kbx16，有啟動區(qū)域的單電源閃存 |
| 文件頁數(shù)： | 30/30頁 |
| 文件大?。?/td> | 207K |
| 代理商： | M29F100-T70M3TR |
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Mne.
Instr.
Cyc.
1st Cyc.
2nd Cyc.
3rd Cyc.
4th Cyc.
5th Cyc.
6th Cyc.
7th Cyc.
RD
(2,4)
Read/Reset
Memory Array
1+
Addr.
(3,7)
X
Read Memory Array until a new write cycle is initiated.
Data
F0h
3+
Addr.
(3,7)
Byte
AAAAh
5555h
AAAAh
Read Memory Array until a new write cycle
is initiated.
Word
5555h
2AAAh
5555h
Data
AAh
55h
F0h
AS
(4)
Auto Select
3+
Addr.
(3,7)
Byte
AAAAh
5555h
AAAAh
Read Electronic Signature or Block
Protection Status until a new write cycle is
initiated. See Note 5 and 6.
Word
5555h
2AAAh
5555h
Data
AAh
55h
90h
PG
Program
4
Addr.
(3,7)
Byte
AAAAh
5555h
AAAAh
Program
Address
Read Data Polling or Toggle Bit
until Program completes.
Word
5555h
2AAAh
5555h
Data
AAh
55h
A0h
Program
Data
BE
Block Erase
6
Addr.
(3,7)
Byte
AAAAh
5555h
AAAAh
5555h
Block
Address
Additional
Block
(8)
Word
5555h
2AAAh
5555h
2AAAh
Data
AAh
55h
80h
AAh
55h
30h
CE
Chip Erase
6
Addr.
(3,7)
Byte
AAAAh
5555h
AAAAh
5555h
AAAAh
Note 9
Word
5555h
2AAAh
5555h
2AAAh
5555h
Data
AAh
55h
80h
AAh
55h
10h
ES
(10)
Erase
Suspend
1
Addr.
(3,7)
X
Read until Toggle stops, then read all the data needed from any
Block(s) not being erased then Resume Erase.
Data
B0h
ER
Erase
Resume
1
Addr.
(3,7)
X
Read Data Polling or Toggle Bits until Erase completes or Erase is
suspended another time
Data
30h
Notes: 1. Commands not interpreted in this table will default to read array mode.
2. A wait of tPLYH is necessary after a Read/Reset command if the memory was in an Erase or Program mode
before starting any new operation (see Table 14 and Figure 9).
3. X = Don’t Care.
4. The first cycles of the RD or AS instructions are followed by read operations. Any number of read cycles can occur after
the command cycles.
5. Signature Address bits A0, A1 at VIL will output Manufacturer code (20h). Address bits A0 at VIH and A1 at VIL will output
Device code.
6. Block Protection Address: A0 at VIL,A1 at VIH and A12-A15 within the Block will output the Block Protection status.
7. For Coded cycles address inputs A15 is don’t care.
8. Optional, additional Blocks addresses must be entered within the erase timeout delay after last write entry,
timeout status can be verified through DQ3 value (see Erase Timer Bit DQ3 description).
When full command is entered, read Data Polling or Toggle bit until Erase is completed or suspended.
9. Read Data Polling, Toggle bits or RB until Erase completes.
10.During Erase Suspend, Read and Data Program functions are allowed in blocks not being erased.
Table 8. Instructions (1)
9/30
M29F100T, M29F100B
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| M29F102B45K1 | 制造商:STMicroelectronics 功能描述: |
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| M29F102BB35N1 | 功能描述:閃存 1M (64Kx16) 35ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F102BB45K1 | 功能描述:電可擦除可編程只讀存儲器 1M (64Kx16) 45ns RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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