參數(shù)資料
型號： M29DW128F60ZA6F
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述： 128兆位（16Mb的x8或和8Mb x16插槽，多行，頁，引導(dǎo)塊）3V電源，快閃記憶體
文件頁數(shù)： 61/93頁
文件大小： 719K
代理商： M29DW128F60ZA6F
M29DW128F
10 DC and AC parameters
61/93
Figure 16. Toggle and Alternative Toggle Bits Mechanism, Chip Enable Controlled
1.
2.
3.
The Toggle bit is output on DQ6.
The Alternative Toggle bit is output on DQ2.
Refer to
Table 26: Read AC Characteristics
for the value of t
ELQV
.
Figure 17. Toggle and Alternative Toggle Bits Mechanism, Output Enable Controlled
1.
2.
3.
The Toggle bit is output on DQ6.
The Alternative Toggle bit is output on DQ2.
Refer to
Table 26: Read AC Characteristics
for the value of t
GLQV
.
Table 29.
Toggle and Alternative Toggle Bits AC Characteristics
Symbol
Alt
Parameter
M29DW128F
Unit
60
70
t
AXEL
Address Transition to Chip Enable Low
Min
10
10
ns
t
AXGL
Address Transition to Output Enable Low
Min
10
10
ns
AI08914e
G
A0-A22
DQ2
(1)
/DQ6
(2)
E
tAXEL
tELQV
Data
Data
Toggle/
Alt.Toggle Bit
tELQV
Address in the Bank
being Programmed or Erased
Read Operation outside the Bank
Being Programmed or Erased
Address Outside the Bank
being Programmed or Erased
Toggle/
Alt.Toggle Bit
Read Operation Outside the Bank
Being Programmed or Erased
Read Operation in the Bank
Being Programmed or Erased
Address Outside the Bank
being Programmed or Erased
AI08915e
G
A0-A22
DQ2
(1)
/DQ6
(2)
E
tAXGL
tGLQV
Data
Data
Toggle/
Alt.Toggle Bit
tGLQV
Address in the Bank
being Programmed/Erased
Read Operation outside Bank
Being Programmed or Erased
Address Outside the Bank
being Programmed/Erased
Toggle/
Alt.Toggle Bit
Read Operation outside Bank
Being Programmed or Erased
Read Operation in Bank
Being Programmed or Erased
Address Outside the Bank
being Programmed/Erased
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PDF描述
M29DW128F60ZA6T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29DW128F60ZA6T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F70NF1 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F70NF1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F70NF1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F70NF1T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
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