參數(shù)資料
型號(hào)： M29DW128F60ZA6F
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述： 128兆位（16Mb的x8或和8Mb x16插槽，多行，頁(yè)，引導(dǎo)塊）3V電源，快閃記憶體
文件頁(yè)數(shù)： 44/93頁(yè)
文件大?。?/td> 719K
代理商： M29DW128F60ZA6F
6 Command Interface
M29DW128F
44/93
Table 17.
Protection Command Addresses
Table 18.
Program, Erase Times and Program, Erase Endurance Cycles
14. Cycle 4 erases all Non-Volatile Modify Protection bits. Cycles 5 and 6 verify that the bits have been successfully cleared
when DQ0=0. If DQ0=1 in the 6
th
cycle, the erase command must be issued again and verified again. Before issuing the
erase command, all Non-Volatile Modify Protection bits should be programmed to prevent over erasure.
15. DQ1=1 if the Non-Volatile Modify Protection bit is locked, DQ1 = 0 if it is unlocked.
Bit
Condition
Address Inputs A7-A0
Other Address Inputs
Password Protection Mode Lock Bit
Address (PL)
RP at V
IH
00001010
X
RP at V
ID
10001010
X
Standard Protection Mode Lock bit Address (SL)
00010010
X
Non-Volatile Modify Protection Bit Address (NVMP)
01000010
Block Protection Group
Address
Extended Block Protection Bit Address (OW)
00011010
X
Parameter
Min
Typ
(1)(2)
1.
Typical values measured at room temperature and nominal voltages.
2.
Sampled, but not 100% tested.
Max
(2)
Unit
Chip Erase
80
400
(3)
3.
Maximum value measured at worst case conditions for both temperature and V
CC
after 100,00 program/erase cycles.
Maximum value measured at worst case conditions for both temperature and V
CC
.
s
Block Erase (64 KBytes)
0.8
6
(4)
4.
s
Erase Suspend Latency Time
50
(4)
μs
Byte Program
Single or Multiple Byte Program
(1, 2, 4 or 8 Bytes at-a-time)
10
200
(3)
μs
Write to Buffer and Program
(64 Bytes at-a-time)
V
PP
/WP =V
PPH
90
μs
V
PP
/WP=V
IH
280
Word Program
Single or Multiple Word Program
(1, 2 or 4 Words at-a-time)
10
200
(3)
μs
Write to Buffer and Program
(32 Words at-a-time)
V
PP
/WP=
V
PPH
90
μs
V
PP
/WP=V
IH
280
Chip Program (Byte by Byte)
80
400
(3)
s
Chip Program (Word by Word)
40
200
(3)
s
Chip Program (Quadruple Byte or Double Word)
20
100
(3)
s
Chip Program (Octuple Byte or Quadruple Word)
10
50
(3)
s
Program Suspend Latency Time
4
μs
Program/Erase Cycles (per Block)
100,000
cycles
Data Retention
20
years
相關(guān)PDF資料
PDF描述
M29DW128F60ZA6T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
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M29DW128F70NF1E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29DW128F60ZA6T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F70NF1 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F70NF1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F70NF1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F70NF1T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
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