參數(shù)資料
型號: M29DW128F60ZA6F
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述: 128兆位(16Mb的x8或和8Mb x16插槽,多行,頁,引導(dǎo)塊)3V電源,快閃記憶體
文件頁數(shù): 19/93頁
文件大小: 719K
代理商: M29DW128F60ZA6F
M29DW128F
3 Bus operations
19/93
3.6.5
Temporary Unprotect of High Voltage Protected Blocks
The RP pin can be used to temporarily unprotect all the blocks previously protected using the
In-System or the Programmer protection technique (High Voltage techniques).
Refer to
Reset/Block Temporary Unprotect (RP)
in
Section 2: Signal descriptions
.
Table 3.
Bus Operations, 8-bit Mode
Table 4.
Read Electronic Signature, 8-bit Mode
Operation
(1)
1.
X = V
IL
or V
IH
.
E
G
W
RP V
PP
/WP
Address Inputs
Data Inputs/Outputs
A22-A0, DQ15A-1
DQ14-DQ8
DQ7-DQ0
Bus Read
V
IL
V
IL
V
IH
V
IH
V
IH
Cell Address
Hi-Z
Data Output
Bus Write
V
IL
V
IH
V
IL
V
IH
V
IH
Command Address
Hi-Z
Data Input
Output Disable
X
V
IH
V
IH
V
IH
V
IH
X
Hi-Z
Hi-Z
Standby
V
IH
X
X
V
IH
V
IH
X
Hi-Z
Hi-Z
Read Cycle
(1)
1.
X = V
IL
or V
IH
.
E
G
W
Address Inputs
Data Inputs/
Outputs
A22-
A10
A9 A8
A7-
A6
A5-
A4
A3
A2
A1
A0
DQ15A
-1
DQ14-
DQ8
DQ7-
DQ0
Manufacturer Code
V
IL
V
IL
V
IH
X
V
ID
X
V
IL
X
V
IL
V
IL
V
IL
V
IL
X
Hi-Z
20h
Device Code (Cycle 1)
V
IL
V
IL
V
IL
V
IL
V
IH
X
Hi-Z
7Eh
Device Code (Cycle 2)
V
IH
V
IH
V
IH
V
IL
X
Hi-Z
20h
Device Code (Cycle 3)
V
IH
V
IH
V
IH
V
IH
X
Hi-Z
00h
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