參數(shù)資料
型號： M29DW128F60ZA1E
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述： 128兆位（16Mb的x8或和8Mb x16插槽，多行，頁，引導(dǎo)塊）3V電源，快閃記憶體
文件頁數(shù)： 41/93頁
文件大?。?/td> 719K
代理商： M29DW128F60ZA1E
M29DW128F
6 Command Interface
41/93
6.3.13 Verify Non-Volatile Modify
Protection Bit command
The status of a Non-Volatile Modify Protection bit for a given block or group of blocks can be
read by issuing a Verify Non-Volatile Modify Protection Bit command along with the block
address.
6.3.14 Clear Non-Volatile Modify Protection Bits command
This command is used to clear all Non-Volatile Modify Protection bits. No specific block address
is required. If the Lock-Down bit is set to ‘1’, the command will fail.
Six cycles are required to issue a Clear Non-Volatile Modify Protection Bits command:
1.
The first two cycles are unlock cycles.
2.
The third cycle issues the command.
3.
The last three cycles verify if the operation has been successful. If DQ0 is set to ’0’, all
Non-Volatile Modify Protection bits have been successfully cleared. If DQ0 is ‘1’, the
operation has failed and the command must be re-issued.
There must be a 12ms delay between the fourth and fifth cycles.
6.3.15 Set Lock Bit command
The Set Lock Bit command individually sets the Lock bit to ‘1’ for a given block or group of
blocks.
If the Non-Volatile Lock bit for the same block or group of blocks is set, the block is locked
regardless of the value of the Lock bit. (see
Table 10: Block Protection Status
).
6.3.16 Clear Lock Bit command
The Clear Lock Bit command individually clears (sets to ‘0’) the Lock Bit for a given block or
group of blocks.
If the Non-Volatile Lock bit for the same block or group of blocks is set, the block or group of
blocks remains locked (see
Table 10: Block Protection Status
).
6.3.17 Verify Lock Bit command
The status of a Lock bit for a given block can be read by issuing a Verify Lock Bit command
along with the block address.
6.3.18 Set Lock-Down Bit command
This command is used to set the Lock-Down bit to ‘1’ thus protecting the Non-Volatile Modify
Protection bits from program and erase.
There is no Unprotect Lock-Down Bit command.
6.3.19 Verify Lock-Down Bit command
This command is used to read the status of the Lock-Down bit. The status is output on bit DQ1.
If DQ1 is ‘1’, all the Non-Volatile Modify Protection bits are protected from program or erase
operations.
相關(guān)PDF資料
PDF描述
M29DW128F60ZA1F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60ZA1T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60ZA6 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60ZA6E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60ZA6F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29DW128F60ZA1F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA1T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA6 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA6E 功能描述:閃存 STD FLASH 128 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29DW128F60ZA6F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
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