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參數(shù)資料
| 型號： | M295V400T-55N6R |
| 廠商： | 意法半導體 |
| 英文描述： | 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory |
| 中文描述： | 4兆位512KB的x8或256Kb的x16插槽，啟動座單電源閃存 |
| 文件頁數(shù)： | 19/34頁 |
| 文件大?。?/td> | 231K |
| 代理商： | M295V400T-55N6R |
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Symbol
Alt
Parameter
M29F400T /M29F400B
Unit
-90
-120
Standard
Interface
Standard
Interface
Min
Max
Min
Max
t
AVAV
t
WC
Address Valid to Next AddressValid
90
120
ns
t
ELWL
t
CS
Chip Enable Low toWrite Enable Low
0
0
ns
t
WLWH
t
WP
Write Enable Low to WriteEnable High
45
50
ns
t
DVWH
t
DS
Input Valid to Write Enable High
45
50
ns
t
WHDX
t
DH
Write Enable High to Input Transition
0
0
ns
t
WHEH
t
CH
Write Enable High to Chip Enable High
0
0
ns
t
WHWL
t
WPH
Write Enable High to Write EnableLow
20
20
ns
t
AVWL
t
AS
Address Valid to Write Enable Low
0
0
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
45
50
ns
t
GHWL
Output Enable High to Write Enable Low
0
0
ns
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
50
50
μ
s
t
WHGL
t
PHPHH(1,2)
t
OEH
Write Enable High to Output Enable Low
0
0
ns
t
VIDR
RP Rise Time to V
ID
500
500
ns
t
PLPX
t
RP
RP Pulse Width
500
500
ns
t
WHRL(1)
t
PHWL(1)
t
BUSY
Program Erase Valid to RB Delay
35
50
ns
t
RSP
RP High to Write Enable Low
4
4
μ
s
Notes:
1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
Table 15B. Write AC Characteristics, WriteEnable Controlled
(T
A
= 0 to 70
°
C, –40 to 85
°
C or –40 to 125
°
C)
pended, a Read from blocks being erased will
output DQ2 toggling and DQ6 at ’1’. ARead from
a blocknotbeing erasedreturnsvalid data. During
suspension the memory will respond only to the
Erase Resume ER and the Program PG instruc-
tions. A Program operation can be initiated during
erase suspend in one of the blocks not being
erased. It willresultinboth DQ2and DQ6 toggling
whenthedataisbeingprogrammed. ARead/Reset
command will definitively abort erasure and result
in invaliddata in the blocks being erased.
Erase Resume (ER) Instruction.
Suspend instruction was previously executed, the
erase operation may be resumed by giving the
command 30h, at any address, and without any
Codedcycles.
If an Erase
19/34
M29F400T, M29F400B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M295V400T-55N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory |
| M295V400T-70M1R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory |
| M295V400T-70M1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory |
| M295V400T-70M3R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory |
| M295V400T-70M3TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory |
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