參數(shù)資料
型號(hào): M28W160ECB70ZB6S
廠(chǎng)商: 意法半導(dǎo)體
英文描述: 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
中文描述: 16兆位(1兆x16插槽,引導(dǎo)塊)3V電源快閃記憶體
文件頁(yè)數(shù): 28/50頁(yè)
文件大?。?/td> 860K
代理商: M28W160ECB70ZB6S
M28W160ECT, M28W160ECB
28/50
Figure 12. Power-Up and Reset AC Waveforms
Table 18. Power-Up and Reset AC Characteristics
Note: 1. The device Reset is possible but not guaranteed if t
PLPH
< 100ns.
2. Sampled only, not 100% tested.
3. It is important to assert RP in order to allow proper CPU initialization during power up or reset.
Symbol
Parameter
Test Condition
M28W160EC
Unit
70
85
90
100
t
PHWL
t
PHEL
t
PHGL
Reset High to Write Enable Low, Chip
Enable Low, Output Enable Low
During
Program
and Erase
Min
50
50
50
50
μs
others
Min
30
30
30
30
ns
t
PLPH(1,2)
Reset Low to Reset High
Min
100
100
100
100
ns
t
VDHPH(3)
Supply Voltages High to Reset High
Min
50
50
50
50
μs
AI03537b
W,
RP
tPHWL
tPHEL
tPHGL
E, G
VDD, VDDQ
tVDHPH
tPHWL
tPHEL
tPHGL
tPLPH
Power-Up
Reset
相關(guān)PDF資料
PDF描述
M28W160ECB70ZB6T Trenchmos (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 22 nC; R<sub>DS(on)</sub>: 3@10V4@5V4.4@4.5V mOhm; Thermal Resistance: 0.59 K/W; V<sub>DS</sub>max: 30 V
M28W160ECB70ZB6U TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 56 nC; R<sub>DS(on)</sub>: 4@10V4.4@5V5.9@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 40 V
M28W160ECB85N1E TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 50 nC; R<sub>DS(on)</sub>: 5.8@10V6.3@5V6.7@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 55 V
M28W160ECB85N1F 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB85N1S 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
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