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參數(shù)資料
| 型號： | M27128A-4F1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | NMOS 128K 16K x 8 UV EPROM |
| 中文描述： | NMOS管128K的16K的× 8紫外線存儲器 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 107K |
| 代理商： | M27128A-4F1 |
For the most efficient use of these two control lines,
E should be decoded and used as the primary
device selecting function, while G should be made
a common connection to all devices in the array
and connected to the READ line from the system
control bus.
This ensures that all deselected memory devices
are in their low power standby mode and that the
output pins are only active when data is required
from a particular memory device.
System Considerations
The power switching characteristics of fast
EPROMs require careful decoupling of the devices.
The supply current, I
CC
, has three segments that
are of interest to the system designer: the standby
current level, the active current level, and transient
current peaks that are produced by the falling and
rising edges of E. The magnitude of this transient
current peaks is dependent on the capacitive and
inductive loading of the device at the output. The
associated transient voltage peaks can be sup-
pressed by complying with the two line output
control and by properly selected decoupling ca-
pacitors. It is recommended that a
1
μ
F ceramic
capacitor be used on every device between V
CC
and V
SS
. This should be a high frequency capacitor
of low inherent inductance and should be placed
as close to the device as possible. In addition, a
4.7
μ
F bulk electrolytic capacitor should be used
between V
CC
and GND for every eight devices. The
bulk capacitor should be located near the power
supply connection point. The purpose of the bulk
capacitor is to overcome the voltage drop caused
by the inductive effects of PCB traces.
Programming
When delivered (and after each erasure for UV
EPPROM), all bits of the M27128A are in the “1"
state. Data is introduced by selectively program-
ming ”0s" into the desired bit locations. Although
only “0s” will be programmed, both “1s” and “0s”
can be present in the data word. The only way to
change a “0" to a ”1" is by ultraviolet light erasure.
The M27128A is in the programming mode when
V
PP
input is at 12.5V and E and P are at TTL low.
The data to be programmed is applied 8 bits in
parallel, to the data output pins. The levels required
for the address and data inputs are TTL.
Fast Programming Algorithm
Fast Programming Algorithm rapidly programs
M27128A EPROMs using an efficient and reliable
method suited to the production programming en-
vironment. Programming reliability is also ensured
as the incremental program margin of each byte is
Mode
E
G
P
A9
V
PP
Q0 - Q7
Read
V
IL
V
IL
V
IH
X
V
CC
Data Out
Output Disable
V
IL
V
IH
V
IH
X
V
CC
Hi-Z
Program
V
IL
V
IH
V
IL
Pulse
X
V
PP
Data In
Verify
V
IL
V
IL
V
IH
X
V
PP
Data Out
Program Inhibit
V
IH
X
X
X
V
PP
Hi-Z
Standby
V
IH
X
X
X
V
CC
Hi-Z
Electronic Signature
V
IL
V
IL
V
IH
V
ID
V
CC
Codes Out
Note:
X = V
IH
or V
IL
, V
ID
= 12V
±
0.5%.
Table 3. Operating Modes
Identifier
A0
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
Hex Data
Manufacturer’s Code
V
IL
0
0
1
0
0
0
0
0
20h
Device Code
V
IH
1
0
0
0
1
0
0
1
89h
Table 4. Electronic Signature
DEVICE OPERATION
(cont’d)
3/10
M27128A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27128A-4F6 | NMOS 128K 16K x 8 UV EPROM |
| M27128AF1 | NMOS 128K 16K x 8 UV EPROM |
| M27128A | AVDVANCED 64K (8K x 8) UV ERASABLE PROM |
| M2732A | NMOS 32K (4K x 8) UV EPROM(NMOS 32K紫外線擦除EPROM) |
| M27512 | NMOS 512K (64K x 8) UV EPROM(NMOS 512K紫外線擦除EPROM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27128A-4F6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 128K 16K x 8 UV EPROM |
| M27128AF1 | 功能描述:可擦除可編程ROM DISC BY STM 6/01 DIP-28 16KX8 250NS RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
| M27128AF6 | 制造商:STMicroelectronics 功能描述: |
| M27128AFI | 制造商:STMicroelectronics 功能描述: |
| M2716 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16K (2K x 8) UV ERASABLE PROM |
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