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參數(shù)資料
| 型號： | M27128AF1 |
| 廠商： | 意法半導體 |
| 英文描述： | NMOS 128K 16K x 8 UV EPROM |
| 中文描述： | NMOS管128K的16K的× 8紫外線存儲器 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 107K |
| 代理商： | M27128AF1 |
AI00769B
14
A0-A13
P
Q0-Q7
VPP
VCC
M27128A
G
E
VSS
8
Figure 1. Logic Diagram
M27128A
NMOS 128K (16K x 8) UV EPROM
FAST ACCESS TIME: 200ns
EXTENDED TEMPERATURE RANGE
SINGLE 5 V SUPPLY VOLTAGE
LOW STANDBY CURRENT: 40mA max
TTL COMPATIBLE DURING READ and
PROGRAM
FAST PROGRAMMING ALGORITHM
ELECTRONIC SIGNATURE
PROGRAMMING VOLTAGE: 12V
DESCRIPTION
The M27128A is a 131,072 bit UV erasable and
electrically programmable memory EPROM. It is
organized as 16,384 words by 8 bits.
The M27128A is housed in a 28 Pin Window Ce-
ramic Frit-Seal Dual-in-Line package. The trans-
parent lid allows the user to expose the chip to
ultraviolet light to erase the bit pattern. A new
pattern can then be written to the device by follow-
ing the programming procedure.
A0 - A13
Address Inputs
Q0 - Q7
Data Outputs
E
Chip Enable
G
Output Enable
P
Program
V
PP
Program Supply
V
CC
Supply Voltage
V
SS
Ground
Table 1. Signal Names
1
28
FDIP28W (F)
March 1995
1/10
相關PDF資料 |
PDF描述 |
|---|---|
| M27128A | AVDVANCED 64K (8K x 8) UV ERASABLE PROM |
| M2732A | NMOS 32K (4K x 8) UV EPROM(NMOS 32K紫外線擦除EPROM) |
| M27512 | NMOS 512K (64K x 8) UV EPROM(NMOS 512K紫外線擦除EPROM) |
| M2764A | NMOS 64K (8K x 8) UV EPROM(NMOS 64K紫外線擦除EPROM) |
| M27C1001-15BTR | 1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M27128AF6 | 制造商:STMicroelectronics 功能描述: |
| M27128AFI | 制造商:STMicroelectronics 功能描述: |
| M2716 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16K (2K x 8) UV ERASABLE PROM |
| M2716F1 | 制造商:STMicroelectronics 功能描述:EPROM, 2K x 8, 24 Pin, Ceramic, DIP |
| M2716M | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16K (2K x 8) UV ERASABLE PROM |
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