參數資料
型號: M27512
廠商: 意法半導體
英文描述: NMOS 512K (64K x 8) UV EPROM(NMOS 512K紫外線擦除EPROM)
中文描述: NMOS管為512k(64K的× 8)紫外線存儲器(NMOS管紫外線擦除存儲器為512k)
文件頁數: 1/11頁
文件大?。?/td> 115K
代理商: M27512
AI00765B
16
Q0-Q7
VCC
M27512
GVPP
VSS
8
A0-A15
E
Figure 1. Logic Diagram
M27512
NMOS 512K (64K x 8) UV EPROM
FAST ACCESS TIME: 200ns
EXTENDED TEMPERATURE RANGE
SINGLE 5V SUPPLY VOLTAGE
LOW STANDBY CURRENT: 40mA max
TTL COMPATIBLE DURING READ and
PROGRAM
FAST PROGRAMMING ALGORITHM
ELECTRONIC SIGNATURE
PROGRAMMING VOLTAGE: 12V
DESCRIPTION
The M27512 is a 524,288 bit UV erasable and
electrically programmable memory EPROM. It is
organized as 65,536 words by 8 bits.
The M27512 is housed in a 28 Pin Window Ceramic
Frit-Seal Dual-in-Line package. The transparent lid
allows the user to expose the chip to ultraviolet light
to erase the bit pattern. A new pattern can then be
written to the device by following the programming
procedure.
A0 - A15
Address Inputs
Q0 - Q7
Data Outputs
E
Chip Enable
GV
PP
Output Enable / Program Supply
V
CC
Supply Voltage
V
SS
Ground
Table 1. Signal Names
1
28
FDIP28W (F)
March 1995
1/11
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M27512-2F1 功能描述:可擦除可編程ROM DISC BY STM 07/01 DIP-28 64KX8 200NS RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:TO-92