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參數(shù)資料
| 型號： | M25PX32-VMW6F |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 35/63頁 |
| 文件大?。?/td> | 394K |
| 代理商： | M25PX32-VMW6F |
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M25PX32
Instructions
35/63
6.9
Read Lock Register (RDLR)
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
Lock Register (RDLR) instruction is followed by a 3-byte address (A23-A0) pointing to any
location inside the concerned sector. Each address bit is latched-in during the rising edge of
Serial Clock (C). Then the value of the Lock Register is shifted out on Serial Data output
(DQ1), each bit being shifted out, at a maximum frequency f
C
, during the falling edge of
Serial Clock (C).
The instruction sequence is shown in
Figure 16
.
The Read Lock Register (RDLR) instruction is terminated by driving Chip Select (S) High at
any time during data output.
Any Read Lock Register (RDLR) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Table 9.
Figure 16.
Read Lock Register (RDLR) instruction sequence and data-out sequence
Lock Register out
(1)
1.
Values of (b1, b0) after Power-up are defined in
Section 7: Power-up and Power-down
.
Bit
Bit name
Value
Function
b7-b2
Reserved
b1
Sector Lock Down
‘1’
The Write Lock and Lock Down bits cannot be changed.
Once a ‘1’ is written to the Lock Down bit it cannot be cleared
to ‘0’, except by a power-up.
‘0’
The Write Lock and Lock Down bits can be changed by
writing new values to them.
b0
Sector Write Lock
‘1’
Write, Program and Erase operations in this sector will not be
executed. The memory contents will not be changed.
‘0’
Write, Program and Erase operations in this sector are
executed and will modify the sector contents.
C
DQ0
AI13738
S
DQ1
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35
22 21
3
2
1
0
36 37 38
7
6
5
4
3
1
0
High Impedance
Lock Register Out
Instruction
24-bit address
0
MSB
MSB
2
39
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PX32-VMF6E | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PX32-VMF6F | 4 Mbit Uniform Sector, Serial Flash Memory |
| M27128A | NMOS 128K 16K x 8 UV EPROM |
| M27128A-20F1 | NMOS 128K 16K x 8 UV EPROM |
| M27128A-20F6 | NMOS 128K 16K x 8 UV EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PX32-VMW6FBA | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M25PX32-VMW6Y | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays |
| M25PX32-VZM6E | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 32MBIT 75MHZ 24TBGA |
| M25PX32-VZM6F | 功能描述:IC FLASH 32MBIT 75MHZ 24TBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF) |
| M25PX32-VZM6FBA | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel |
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