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參數(shù)資料
| 型號(hào)： | M25PX32-VMW6F |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 29/63頁 |
| 文件大?。?/td> | 394K |
| 代理商： | M25PX32-VMW6F |
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M25PX32
Instructions
29/63
6.4.4
TB bit
The Top/Bottom (TB) bit is non-volatile. It can be set and reset with the Write Status
Register (WRSR) instruction provided that the Write Enable (WREN) instruction has been
issued. The Top/Bottom (TB) bit is used in conjunction with the Block Protect (BP0, BP1,
BP2) bits to determine if the protected area defined by the Block Protect bits starts from the
top or the bottom of the memory array:
When TB is reset to ‘0’ (default value), the area protected by the Block Protect bits
starts from the top of the memory array (see
Table 3: Protected area sizes
)
When TB is set to ‘1’, the area protected by the Block Protect bits starts from the
bottom of the memory array (see
Table 3: Protected area sizes
)
●
●
The TB bit cannot be written when the SRWD bit is set to ‘1’ and the W pin is driven Low.
6.4.5
SRWD bit
The Status Register Write Disable (SRWD) bit is operated in conjunction with the Write
Protect (W/V
PP
) signal. The Status Register Write Disable (SRWD) bit and the Write Protect
(W/V
PP
) signal allow the device to be put in the hardware protected mode (when the Status
Register Write Disable (SRWD) bit is set to ‘1’, and Write Protect (W/V
PP
) is driven Low). In
this mode, the non-volatile bits of the Status Register (SRWD, BP2, BP1, BP0) become
read-only bits and the Write Status Register (WRSR) instruction is no longer accepted for
execution.
Figure 11.
Read Status Register (RDSR) instruction sequence and data-out
sequence
C
DQ0
S
2
1
3
4
5
6
7
8
9 10 11 12 13 14 15
Instruction
0
AI13734
DQ1
7
6
5
4
3
2
1
0
Status Register Out
High Impedance
MSB
7
6
5
4
3
2
1
0
Status Register Out
MSB
7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PX32-VMF6E | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PX32-VMF6F | 4 Mbit Uniform Sector, Serial Flash Memory |
| M27128A | NMOS 128K 16K x 8 UV EPROM |
| M27128A-20F1 | NMOS 128K 16K x 8 UV EPROM |
| M27128A-20F6 | NMOS 128K 16K x 8 UV EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PX32-VMW6FBA | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M25PX32-VMW6Y | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays |
| M25PX32-VZM6E | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 32MBIT 75MHZ 24TBGA |
| M25PX32-VZM6F | 功能描述:IC FLASH 32MBIT 75MHZ 24TBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF) |
| M25PX32-VZM6FBA | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel |
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