參數(shù)資料
型號(hào)： M25PX32-VMF6E
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁(yè)數(shù)： 47/63頁(yè)
文件大?。?/td> 394K
代理商： M25PX32-VMF6E
M25PX32
Instructions
47/63
6.18
Deep Power-down (DP)
Executing the Deep Power-down (DP) instruction is the only way to put the device in the
lowest consumption mode (the Deep Power-down mode). It can also be used as a software
protection mechanism, while the device is not in active use, as in this mode, the device
ignores all Write, Program and Erase instructions.
Driving Chip Select (S) High deselects the device, and puts the device in the Standby Power
mode (if there is no internal cycle currently in progress). But this mode is not the Deep
Power-down mode. The Deep Power-down mode can only be entered by executing the
Deep Power-down (DP) instruction, subsequently reducing the standby current (from I
CC1
to
I
CC2
, as specified in
Table 16
).
To take the device out of Deep Power-down mode, the Release from Deep Power-down
(RDP) instruction must be issued. No other instruction must be issued while the device is in
Deep Power-down mode.
The Deep Power-down mode automatically stops at Power-down, and the device always
Powers-up in the Standby Power mode.
The Deep Power-down (DP) instruction is entered by driving Chip Select (S) Low, followed
by the instruction code on Serial Data input (DQ0). Chip Select (S) must be driven Low for
the entire duration of the sequence.
The instruction sequence is shown in
Figure 26
.
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the Deep Power-down (DP) instruction is not executed. As soon as
Chip Select (S) is driven High, it requires a delay of t
DP
before the supply current is reduced
to I
CC2
and the Deep Power-down mode is entered.
Any Deep Power-down (DP) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 26.
Deep Power-down (DP) instruction sequence
C
DQ0
AI13744
S
2
1
3
4
5
6
7
0
t
DP
Deep Power-down mode
Standby mode
Instruction
相關(guān)PDF資料
PDF描述
M25PX32-VMF6F 4 Mbit Uniform Sector, Serial Flash Memory
M27128A NMOS 128K 16K x 8 UV EPROM
M27128A-20F1 NMOS 128K 16K x 8 UV EPROM
M27128A-20F6 NMOS 128K 16K x 8 UV EPROM
M27128A-25F1 NMOS 128K 16K x 8 UV EPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PX32-VMF6EBA 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays
M25PX32-VMF6F 功能描述:IC FLASH 32MBIT 75MHZ 16SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
M25PX32-VMF6FBA 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel
M25PX32-VMP6E 功能描述:IC FLASH 32MBIT 75MHZ 8VFQFPN RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
M25PX32-VMP6F 功能描述:IC FLASH 32MBIT 75MHZ 8VFQFPN RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR)
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