參數(shù)資料
型號： M25PX32-VMF6E
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁數(shù)： 30/63頁
文件大?。?/td> 394K
代理商： M25PX32-VMF6E
Instructions
M25PX32
30/63
6.5
Write Status Register (WRSR)
The Write Status Register (WRSR) instruction allows new values to be written to the Status
Register. Before it can be accepted, a Write Enable (WREN) instruction must previously
have been executed. After the Write Enable (WREN) instruction has been decoded and
executed, the device sets the Write Enable Latch (WEL).
The Write Status Register (WRSR) instruction is entered by driving Chip Select (S) Low,
followed by the instruction code and the data byte on Serial Data input (DQ0).
The instruction sequence is shown in
Figure 12
.
The Write Status Register (WRSR) instruction has no effect on b6, b1 and b0 of the Status
Register. b6 is always read as ‘0’.
Chip Select (S) must be driven High after the eighth bit of the data byte has been latched in.
If not, the Write Status Register (WRSR) instruction is not executed. As soon as Chip Select
(S) is driven High, the self-timed Write Status Register cycle (whose duration is t
W
) is
initiated. While the Write Status Register cycle is in progress, the Status Register may still
be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP)
bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed.
When the cycle is completed, the Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) instruction allows the user to change the values of the
Block Protect (BP2, BP1, BP0) bits, to define the size of the area that is to be treated as
read-only, as defined in
Table 3
. The Write Status Register (WRSR) instruction also allows
the user to set and reset the Status Register Write Disable (SRWD) bit in accordance with
the Write Protect (W/V
PP
) signal. The Status Register Write Disable (SRWD) bit and Write
Protect (W/V
PP
) signal allow the device to be put in the hardware protected mode (HPM).
The Write Status Register (WRSR) instruction is not executed once the hardware protected
mode (HPM) is entered.
Figure 12.
Write Status Register (WRSR) instruction sequence
C
DQ0
AI13735
S
DQ1
2
1
3
4
5
6
7
8
9 10 11 12 13 14 15
High Impedance
Instruction
Status
Register In
0
7
6
5
4
3
2
0
1
MSB
相關(guān)PDF資料
PDF描述
M25PX32-VMF6F 4 Mbit Uniform Sector, Serial Flash Memory
M27128A NMOS 128K 16K x 8 UV EPROM
M27128A-20F1 NMOS 128K 16K x 8 UV EPROM
M27128A-20F6 NMOS 128K 16K x 8 UV EPROM
M27128A-25F1 NMOS 128K 16K x 8 UV EPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PX32-VMF6EBA 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays
M25PX32-VMF6F 功能描述:IC FLASH 32MBIT 75MHZ 16SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
M25PX32-VMF6FBA 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel
M25PX32-VMP6E 功能描述:IC FLASH 32MBIT 75MHZ 8VFQFPN RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
M25PX32-VMP6F 功能描述:IC FLASH 32MBIT 75MHZ 8VFQFPN RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR)
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