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參數(shù)資料
| 型號： | M12L32162A-7BG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 16Bit x 2Banks Synchronous DRAM |
| 中文描述： | 2M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| 封裝： | 8 X 8 MM, LEAD FREE, BGA-54 |
| 文件頁數(shù)： | 23/29頁 |
| 文件大?。?/td> | 719K |
| 代理商： | M12L32162A-7BG |
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ES MT
Burst Read Single bit Write Cycle @Burst Length=2
Preliminary
M12L32162A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Apr. 2007
Revision
:
0.3
23/29
*Note:1.BRSW modes is enabled by setting A9 “High” at MRS(Mode Register Set).
At the BRSW Mode, the burst length at write is fixed to “1” regardless of programmed burst length.
2.When BRSW write command with auto precharge is executed, keep it in mind that t
RAS
should not be violated.
Auto precharge is executed at the next cycle of burst-end, so in the case of BRSW write command, the precharge
command will be issued after two clock cycles.
C L O C K
C K E
A D D R
CL=2
DQ M
A10/AP
BA
RAa
RAc
RAa
QAb0
Row Active
(A-Bank)
W rite
(A-Bank)
:Don't Car e
HIGH
QAb1
Precharge
(A-Bank)
CAa
RBb
CAb
CBc
CAd
RAc
DBc0
DQ
DAa0
QAb0
DBc0
QAb1
CL=3
Row Active
(B-Bank)
Row Active
(A-Bank)
W rite with
Auto Precharge
(B- Bank)
Read
(A-Bank)
DAa0
QAd0 QAd1
QAd0 QAd1
*Not e 1
CS
RAS
CAS
W E
RBb
* Not e 2
Read with
Auto Precharge
(A-Bank)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M12L32162A-7TG | 1M x 16Bit x 2Banks Synchronous DRAM |
| M12L64164A-5BG | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L64164A-6BG | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L64164A-7BG | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L64322A-5BG | 512K x 32 Bit x 4 Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M12L32162A-7BVG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM |
| M12L32162A-7TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM |
| M12L32162A-7TVG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM |
| M12L32321A | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Synchronous DRAM |
| M12L32321A-5.5BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Synchronous DRAM |
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