參數(shù)資料
型號: M12L32162A-7BG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 1M x 16Bit x 2Banks Synchronous DRAM
中文描述: 2M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
封裝: 8 X 8 MM, LEAD FREE, BGA-54
文件頁數(shù): 13/29頁
文件大?。?/td> 719K
代理商: M12L32162A-7BG
ES MT
Power Up Sequence
Preliminary
M12L32162A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Apr. 2007
Revision
:
0.3
13/29
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L32162A-7BVG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM
M12L32162A-7TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM
M12L32162A-7TVG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM
M12L32321A 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Synchronous DRAM
M12L32321A-5.5BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Synchronous DRAM