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參數(shù)資料
| 型號： | LX5503E |
| 廠商： | Microsemi Corporation |
| 英文描述： | InGaP HBT 4 - 6GHz Power Amplifier |
| 中文描述： | 的InGaP HBT 4 - 6GHz的功率放大器 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 248K |
| 代理商： | LX5503E |
LX5503E
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 6
W
M
.
C
InGaP HBT 4 – 6GHz Power Amplifier
Copyright
2000
Rev. 1.2d, 2005-08-18
TM
C H A R A C T E R I S T I C C U R V E S
Typical EVM vs. Frequency
(Vc=3.3V, Icq=100mA, Pout=18dBm, 64QAM/54Mbps)
4
4.85
4.95
5.05
5.15
5.25
Frequency (GHz)
5.35
5.45
5.55
5.65
5.75
5.85
2.5
2.75
3
3.25
3.5
3.75
E
EVM
Typical P1dB vs. Supply Voltage
(Vc=3.3V, Icq=100mA, Freq=5.25GHz)
3
3.2
3.4
3.6
3.8
4
Vc (V)
24
24.5
25
25.5
26
26.5
27
27.5
28
P
Typical P1dB vs. Frequency
(Vc=3.3V, Icq=100mA)
4.85
4.95
5.05
5.15
5.25
Frequency (GHz)
5.35
5.45
5.55
5.65
5.75
5.85
24
24.5
25
25.5
26
26.5
27
P
Typical Small-Signal Gain vs. Supply Voltage
(Vc=3.3V, Icq=100mA, Freq=5.25GHz)
21
3
3.2
3.4
3.6
3.8
4
Vc (V)
20
20.25
20.5
20.75
S
Typical S-Parameter Data at Room Temperature
(Vc=3.3V, Icq=100mA)
25
4.2
4.4
4.6
4.8
5.0
5.2
5.4
5.6
5.8
4.0
6.0
-40
-45
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
freq, GHz
d
d
d
d
Typical Small-Signal Gain Variation Over Temperature
(Vc=3.3V, Icq=100mA at Room Temperature)
24
4.2
4.4
4.6
4.8
5.0
5.2
5.4
5.6
5.8
4.0
6.0
11
10
12
13
14
15
16
17
18
19
20
21
22
23
freq, GHz
-40
o
C
-20
o
C
0
o
C
25
o
C
85
o
C
S
G
R
A
P
H
S
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| LX5503-LQ | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 5-6GHz Power Amplifier |
| LX5503LQ-TR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 5-6GHz Power Amplifier |
| LX5506 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 4.5 - 6GHz Power Amplifier |
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