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參數(shù)資料
| 型號(hào)： | LX5503E |
| 廠商： | Microsemi Corporation |
| 英文描述： | InGaP HBT 4 - 6GHz Power Amplifier |
| 中文描述： | 的InGaP HBT 4 - 6GHz的功率放大器 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 248K |
| 代理商： | LX5503E |
LX5503E
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
W
M
.
C
InGaP HBT 4 – 6GHz Power Amplifier
Copyright
2000
Rev. 1.2d, 2005-08-18
TM
E L E C T R I C A L C H A R A C T E R I S T I C S
Unless otherwise specified, the following specifications apply over the following test conditions: Vcc = 3.3V, Icq = 100mA,
T
A
= 25°C
PARAMETER
CONDITION
SYMBOL
Frequency Range
f
Output Power at 1dB Compression
Pout
Power Gain at Pout=18dBm
Gp
EVM at Pout=18dBm
64QAM/54Mbps
Total Current at Pout=18dBm
Ic_total
Quiescent Current
Icq
Bias Control Reference Current
For Icq=100mA
Iref
Small-Signal Gain
S21
Gain Flatness
Over 200MHz
Δ
S21
Gain Variation Over Temperature
-40 to +85
o
C
Δ
S21
Input Return Loss
S11
Output Return Loss
S22
Reverse Isolation
S12
Second Harmonic
Pout = 18dBm
Third Harmonic
Pout = 18dBm
Ramp-On Time
10~90%
t
ON
MIN.
4.9
25
TYP.
26
21
3
150
100
1.5
19
+/-0.5
+/-1
-15
-7
-35
-40
-45
100
MAX.
5.35
-10
MIN.
5.7
25
TYP.
26
16
3
160
100
1.5
15
+/-0.5
+/-1
-12
-8
-35
-35
-45
100
MAX.
5.85
-10
UNIT
GHz
dBm
dB
%
mA
mA
mA
dB
dB
dB
dB
dB
dB
dBc
dBc
ns
E
L
E
C
T
R
I
C
A
L
S
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