參數(shù)資料
型號(hào)： LX5506
廠商： Microsemi Corporation
英文描述： InGaP HBT 4.5 - 6GHz Power Amplifier
中文描述： 的InGaP HBT 4.5 - 6GHz的功率放大器
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 509K
代理商： LX5506
LX5506
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
Copyright
2003
Rev. 1.2c, 2005-08-18
W
M
.
C
InGaP HBT 4.5 – 6GHz Power Amplifier
TM
D E S C R I P T I O N
The LX5506 is a power amplifier
designed for the FCC Unlicensed
National Information Infrastructure
(U-NII) band, HyperLAN2 and Japan
WLAN applications in the 4.9-5.95
GHz frequency range. The PA is
implemented
as
monolithic
microwave
circuit (MMIC) with active bias and
complete on-chip input matching. The
device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor
(HBT)
(MOCVD). It operates at a single
positive voltage supply of 3.3V
(nominal), with +26dBm of P1dB and
up to 23dB power gain in the 5.15 -
5.85GHz frequency range with a
simple output matching capacitor pair.
a
three-stage
integrated
IC
process
For OFDM operation (64QAM,
54Mbps), the PA provides +18dBm
linear output power with a very low
EVM (Error-Vector Magnitude) of
3%, and consumes about 190mA total
DC current. At higher supply voltage
of 5V, the same device provides
+24dBm linear OFDM output power
with 5% EVM.
The LX5506 is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5506 an ideal
solution for broadband, high-gain
power amplifier requirements for IEEE
802.11a, and HiperLAN2 portable
WLAN applications.
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
K E Y F E A T U R E S
Advanced InGaP HBT
Single-Polarity 3.3V Supply
EVM ~ 3% at Pout=18dBm for
64QAM/ 54Mbps OFDM
P1dB ~ +26dBm
Power Gain ~ 23dB at
5.25GHz for Icq ~100mA
Power Gain ~ 21dB at
5.85GHz for Icq ~100mA
Total Current ~190mA at
Pout=18dBm at 5.25GHz
ACPR ~ -50dBc at 30MHz
Offset at Pout=18dBm
Complete On-Chip Input Match
Simple Output Capacitor Match
Small Footprint: 3x3mm2
Low Profile: 0.9mm
A P P L I C A T I O N S
FCC U-NII Wireless
IEEE 802.11a
HiperLAN2
5GHz Cordless Phone
P R O D U C T H I G H L I G H T
P A C K A G E O R D E R I N F O
LQ
16-Pin
LX5506LQ
RoHS Compliant / Pb-free Transition DC: 0418
Note: Available in Tape & Reel. Append the letters “TR” to
the part number. (i.e. LX5506LQ-TR)
Plastic MLPQ
This device is classified as ESD Level 0 in accordance with
JESD22-A114-B, (HBM) testing. Appropriate ESD
procedures should be observed when handling this device.
L
X
5
5
0
6
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LX5506B 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 4 6GHz Power Amplifier
LX5506BLQ 制造商:Microsemi Corporation 功能描述:RF AMP CHIP SGL PWR AMP 5.85GHZ 16MLPQ - Bulk
LX5506BLQ-TR 制造商:Microsemi Corporation 功能描述:RF Amp Chip Single Power Amp 5.85GHz 16-Pin MLPQ EP T/R 制造商:Microsemi Corporation 功能描述:RF AMP CHIP SGL PWR AMP 5.85GHZ 16MLPQ - Tape and Reel
LX5506E 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 4 ?6GHz Power Amplifier
LX5506ELQ 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Wireless LAN Power Amplifier
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