參數(shù)資料
型號: LV320MH
廠商: Spansion Inc.
英文描述: 32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述: 32兆位(4個M × 8位)的MirrorBit⑩3.0伏特,只有統(tǒng)一部門閃存記憶體與VersatileI /輸出⑩控制
文件頁數(shù): 59/61頁
文件大?。?/td> 772K
代理商: LV320MH
September 12, 2006
Am29LV033MU
57
D A T A S H E E T
REVISION SUMMARY
Revision A (June 20, 2002)
Initial release.
Revision A+1 (September 3, 2002)
MIRRORBIT 64 MBIT Device Family
Added 64 Fortified BGA to LV640MU device.
Alternate CE# Controlled Erase and Program
Operations
Added t
RH
parameter to table.
Erase and Program Operations
Added t
BUSY
parameter to table.
Figure 16. Program Operation Timings
Added RY/BY# to waveform.
TSOP and BGA PIN Capacitance
Added the FBGA package.
Program Suspend/Program Resume Command
Sequence
Changed 15
μ
s typical to maximum and added 5
μ
s
typical.
Erase Suspend/Erase Resume Commands
Changed typical from 20
μ
s to 5
μ
s and added a maxi-
mum of 20
μ
s.
Product Selector Guide
Added Note 2.
Added 101R, 112R, and 120R to Speed Options.
Connection Diagrams
Changed pin 30 from the 40-pin standard TSOP and
pin 11 from the 40-pin reverse TSOP from V
CC
to V
IO
.
Ordering Information
Added 101R, 112R, and 120R to Valid Combinations
Table.
Added Note 1.
Replaced 48-Pin Reverse and Standard Pinout Pack-
age to 40-Pin Reverse and Standard Pinout Package.
Read-Only Operations, Alternate CE# Controlled
Erase and Program Operations, and Erase and
Program Operations
Added 101R, 112R, and 120R to Speed Options.
Physical Dimensions
Replaced TS 048 and TSR048 Package drawing to TS
040 and TSR040 Package drawing.
Revision A+2 (November 11, 2002)
Product Selector Guide and Read Only Operations
Added a 30 ns Page Access time and Output Enable
Access time to the 113R and 123R Speed Options.
Ordering Information and Physical Dimensions
Removed FBD048 package.
Added FBC048 package.
Changed order numbers and package markings to re-
flect new package.
Customer Lockable: SecSi Sector NOT
Programmed or Protected at the factory.
Added second bullet, SecSi sector-protect verify text
and figure 3.
SecSi Sector Flash Memory Region, and Enter
SecSi Sector/Exit SecSi Sector Command
Sequence
Noted that the ACC function and unlock bypass modes
are not available when the SecSi sector is enabled.
Byte/Word Program Command Sequence, Sector
Erase Command Sequence, and Chip Erase
Command Sequence
Noted
that the SecSi Sector, autoselect, and CFI
functions are unavailable when a program or erase
operation is in progress.
Common Flash Memory Interface (CFI)
Changed wording in last sentence of third paragraph
from, “...the autoselect mode.” to “...reading array
data.”
Changed CFI website address.
Erase and Programming Performance
Changed the typicals and/or maximums of the Chip
Erase Time, Effective Write Buffer Program Time,
Byte/Word Program Time, and Accelerated Effective
Program Time to TBD.
Revision A+3 (December 5, 2002)
Ordering Information
Modified package markings.
CMOS Compatible
Changed V
IH1
and V
IH2
minimum to 1.9.
Removed typos in notes.
Revision A+4 (April 7, 2003)
Distinctive Characteristics
Corrected typos in performance characteristics.
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