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參數(shù)資料
| 型號(hào)： | LV320MH |
| 廠商： | Spansion Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 32兆位（4個(gè)M × 8位）的MirrorBit⑩3.0伏特，只有統(tǒng)一部門閃存記憶體與VersatileI /輸出⑩控制 |
| 文件頁數(shù)： | 54/61頁 |
| 文件大小： | 772K |
| 代理商： | LV320MH |
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52
Am29LV033MU
September 12, 2006
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, Programming specification assume that
all bits are programmed to 00h.
2. Maximum values are measured at V
CC
= 3.0, worst case temperature. Maximum values are valid up to and including 100,000
program/erase cycles.
3. Byte programming specification is based upon a single byte programming operation not utilizing the write buffer.
4. For 1-32 bytes programmed in a single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-per-byte basis for a 32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence (s) for the program command. See Tables 12 and
13 for further information on command definitions.
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
TSOP PIN AND BGA PACKAGE CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h programming
prior to erasure (Note 6)
Chip Erase Time
32
64
sec
Single Byte Program Time (Note 3)
60
600
μs
Excludes system level
overhead (Note 7)
Accelerated Single Byte Program Time (Note 3)
54
540
μs
Total Write Buffer Program Time (Note 4)
240
1200
μs
Effective Write Buffer Program Time (Note 5)
7.5
38
μs
Total Accelerated Write Buffer Program Time (Note 4)
200
1040
μs
Effective Accelerated Write Buffer Program Time (Note 5)
6.25
33
μs
Chip Program Time
31.5
73
sec
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
6
7.5
pF
BGA
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
8.5
12
pF
BGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
7.5
9
pF
BGA
3.9
4.7
pF
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