- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98003 > LTC3853EUJ#TR (LINEAR TECHNOLOGY CORP) 0.15 A DUAL SWITCHING CONTROLLER, 830 kHz SWITCHING FREQ-MAX, PQCC40 PDF資料下載
參數(shù)資料
| 型號： | LTC3853EUJ#TR |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 0.15 A DUAL SWITCHING CONTROLLER, 830 kHz SWITCHING FREQ-MAX, PQCC40 |
| 封裝： | 6 X 6 MM, PLASTIC, QFN-40 |
| 文件頁數(shù)： | 9/36頁 |
| 文件大?。?/td> | 1780K |
| 代理商： | LTC3853EUJ#TR |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁當(dāng)前第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁
LTC3853
17
3853fa
Inductor Core Selection
Once the inductance value is determined, the type of in-
ductor must be selected. Core loss is independent of core
size for a fixed inductor value, but it is very dependent
on inductance selected. As inductance increases, core
losses go down. Unfortunately, increased inductance
requires more turns of wire and therefore copper losses
will increase.
Ferrite designs have very low core loss and are preferred
at high switching frequencies, so design goals can con-
centrate on copper loss and preventing saturation. Ferrite
core material saturates “hard,” which means that induc-
tance collapses abruptly when the peak design current is
exceeded. This results in an abrupt increase in inductor
ripple current and consequent output voltage ripple. Do
not allow the core to saturate!
Power MOSFET and Schottky Diode
(Optional) Selection
Two external power MOSFETs must be selected for each
controller in the LTC3853: one N-channel MOSFET for the
top (main) switch, and one N-channel MOSFET for the
bottom (synchronous) switch.
The peak-to-peak drive levels are set by the INTVCC/
DRVCC12 voltage. This voltage is typically 5V during start-
up(seeEXTVCCPinConnection).Consequently,logic-level
threshold MOSFETs must be used in most applications.
The only exception is if low input voltage is expected (VIN
< 5V); then, sub-logic level threshold MOSFETs (VGS(TH)
< 3V) should be used. Pay close attention to the BVDSS
specification for the MOSFETs as well; most of the logic
level MOSFETs are limited to 30V or less.
Selection criteria for the power MOSFETs include the on-
resistance, RDS(ON), Miller capacitance, CMILLER, input
voltage and maximum output current. Miller capacitance,
CMILLER, can be approximated from the gate charge curve
usually provided on the MOSFET manufacturers’ data
sheet. CMILLER is equal to the increase in gate charge
along the horizontal axis while the curve is approximately
flat divided by the specified change in VDS. This result is
then multiplied by the ratio of the application applied VDS
to the gate charge curve specified VDS. When the IC is
operating in continuous mode the duty cycles for the top
and bottom MOSFETs are given by:
Main Switch Duty Cycle
=
VOUT
VIN
Synchronous Switch Duty Cycle
=
VIN – VOUT
VIN
The MOSFET power dissipations at maximum output
current are given by:
PMAIN =
VOUT
VIN
IMAX
(
)2 1+ d
(
)RDS(ON) +
VIN
( )2
IMAX
2
RDR
(
) CMILLER
(
)
1
VINTVCC – VTH(MIN)
+
1
VTH(MIN)
fOSC
PSYNC =
VIN – VOUT
VIN
IMAX
(
)2 1+ d
(
)RDS(ON)
where
d is the temperature dependency of RDS(ON) and
RDR (approximately 2Ω) is the effective driver resistance
at the MOSFET’s Miller threshold voltage. VTH(MIN) is the
typical MOSFET minimum threshold voltage.
BothMOSFETshaveI2RlosseswhilethetopsideN-channel
equation includes an additional term for transition losses,
which are highest at high input voltages. For VIN < 20V
the high current efficiency generally improves with larger
MOSFETs, while for VIN > 20V the transition losses rapidly
increase to the point that the use of a higher RDS(ON)device
with lower CMILLERactuallyprovideshigherefficiency.The
synchronous MOSFET losses are greatest at high input
voltage when the top switch duty factor is low or during
a short-circuit when the synchronous switch is on close
to 100% of the period.
The term (1 +
d) is generally given for a MOSFET in the
form of a normalized RDS(ON) vs Temperature curve, but
d = 0.005/°C can be used as an approximation for low
voltage MOSFETs.
APPLICATIONS INFORMATION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LTC3853EUJ | 0.15 A DUAL SWITCHING CONTROLLER, 830 kHz SWITCHING FREQ-MAX, PQCC40 |
| LTC4011EFE#PBF | BATTERY CHARGE CONTROLLER, 615 kHz SWITCHING FREQ-MAX, PDSO20 |
| LTC4075HVXEDD#TR | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO10 |
| LTC4075HVXEDD | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO10 |
| LTC4080EMSE | 0.8 A BATTERY CHARGE CONTROLLER, 2750 kHz SWITCHING FREQ-MAX, PDSO10 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTC3853IUJ#PBF | 功能描述:IC REG CTRLR BUCK PWM CM 40-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:PolyPhase® 標(biāo)準(zhǔn)包裝:4,500 系列:PowerWise® PWM 型:控制器 輸出數(shù):1 頻率 - 最大:1MHz 占空比:95% 電源電壓:2.8 V ~ 5.5 V 降壓:是 升壓:無 回掃:無 反相:無 倍增器:無 除法器:無 Cuk:無 隔離:無 工作溫度:-40°C ~ 125°C 封裝/外殼:6-WDFN 裸露焊盤 包裝:帶卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名稱:LM1771SSDX |
| LTC3853IUJ#TRPBF | 功能描述:IC REG CTRLR BUCK PWM CM 40-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:PolyPhase® 標(biāo)準(zhǔn)包裝:4,500 系列:PowerWise® PWM 型:控制器 輸出數(shù):1 頻率 - 最大:1MHz 占空比:95% 電源電壓:2.8 V ~ 5.5 V 降壓:是 升壓:無 回掃:無 反相:無 倍增器:無 除法器:無 Cuk:無 隔離:無 工作溫度:-40°C ~ 125°C 封裝/外殼:6-WDFN 裸露焊盤 包裝:帶卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名稱:LM1771SSDX |
| LTC3854EDDB#PBF | 制造商:Linear Technology 功能描述:DP-SWREG/Controller, Cut Tape Small Footprint, Low Pin Count Synchronous Step-Do |
| LTC3854EDDB#TRMPBF | 功能描述:IC REG CTRLR BUCK PWM CM 12-DFN RoHS:是 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- PWM 型:電流模式 輸出數(shù):1 頻率 - 最大:500kHz 占空比:96% 電源電壓:4 V ~ 36 V 降壓:無 升壓:是 回掃:無 反相:無 倍增器:無 除法器:無 Cuk:無 隔離:無 工作溫度:-40°C ~ 125°C 封裝/外殼:24-WQFN 裸露焊盤 包裝:帶卷 (TR) |
| LTC3854EDDB#TRPBF | 功能描述:IC REG CTRLR BUCK PWM CM 12-DFN RoHS:是 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- PWM 型:電流模式 輸出數(shù):1 頻率 - 最大:500kHz 占空比:96% 電源電壓:4 V ~ 36 V 降壓:無 升壓:是 回掃:無 反相:無 倍增器:無 除法器:無 Cuk:無 隔離:無 工作溫度:-40°C ~ 125°C 封裝/外殼:24-WQFN 裸露焊盤 包裝:帶卷 (TR) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。