參數(shù)資料
型號(hào): LPC2212
廠商: NXP Semiconductors N.V.
英文描述: 16/32-bit ARM microcontrollers; 128/256 kB ISP/IAP Flash with 10-bit ADC and external memory interface
中文描述: 16/32位ARM微控制器; 128/256 kB ISP / IAP閃存的10位模數(shù)轉(zhuǎn)換器和外部存儲(chǔ)器接口
文件頁(yè)數(shù): 30/40頁(yè)
文件大小: 185K
代理商: LPC2212
Philips Semiconductors
LPC2212/LPC2214
16/32-bit ARM microcontrollers with external memory interface
Product data
Rev. 02 — 23 December 2004
30 of 40
9397 750 13149
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
Typical ratings are not guaranteed. The values listed are at room temperature (+25 C), nominal supply voltages.
Pin capacitance is characterized but not tested.
Including voltage on outputs in 3-state mode.
V
3
supply voltages must be present.
3-state outputs go into 3-state mode when V
3
is grounded.
Accounts for 100 mV voltage drop in all supply lines.
Only allowed for a short time period.
Minimum condition for V
i
= 4.5 V, maximum condition for V
i
= 5.5 V.
[1]
[2]
[3]
[4]
Conditions: V
SSA
= 0 V, V
3A
= 3.3 V.
The A/D is monotonic, there are no missing codes.
The differential non-linearity (DLe) is the difference between the actual step width and the ideal step width. See
Figure 4
.
The integral no-linearity (ILe) is the peak difference between the center of the steps of the actual and the ideal transfer curve after
appropriate adjustment of gain and offset errors. See
Figure 4
.
The offset error (OSe) is the absolute difference between the straight line which fits the actual curve and the straight line which fits the
ideal curve. See
Figure 4
.
The gain error (Ge) is the relative difference in percent between the straight line fitting the actual transfer curve after removing offset
error, and the straight line which fits the ideal transfer curve. See
Figure 4
.
The absolute voltage error (Ae) is the maximum difference between the center of the steps of the actual transfer curve of the
non-calibrated A/D and the ideal transfer curve. See
Figure 4
.
[5]
[6]
[7]
V
OL
I
lkg
Low level output voltage
[6]
Input leakage to V
SS
I
OL
= 3 mA
V
i
= V
3
V
i
= 5 V
-
-
-
-
2
10
0.4
4
22
V
μ
A
μ
A
Oscillator pins
X1 input Voltages
X2 output Voltages
0
0
-
-
V
18
V
18
On-chip Flash program memory
endurance (write and erase)
data retention
100,000
20
-
-
-
-
cycles
years
Table 10:
T
amb
=
40
°
C to +85
°
C for commercial, unless otherwise specified.
Symbol Parameter
Static characteristics
…continued
Conditions
Min
Typ
[1]
Max
Unit
Table 11:
V
3A
= 2.5 V to 3.6 V unless otherwise specified; T
amb
=
40
°
C to +85
°
C unless otherwise specified; A/D converter frequency
4.5 MHz.
Symbol
Parameter
AV
IN
Analog input voltage
C
IN
Analog input capacitance
DL
e
Differential non-linearity
[1][2][3]
IL
e
Integral non-linearity
[1][4]
OS
e
Offset error
[1][5]
G
e
Gain error
[1][6]
A
e
Absolute error
[1][7]
A/D converter DC electrical characteristics
Min
0
-
-
-
-
-
-
Max
V
3A
1
±
1
±
2
±
3
±
0.5
±
4
Unit
V
pF
LSB
LSB
LSB
%
LSB
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