參數(shù)資料
型號: LPC1751FBD80
廠商: NXP SEMICONDUCTORS
元件分類: 微控制器/微處理器
英文描述: Cortex-M3 with 32 kB flash, 8 kB SRAM, USB 2.0 Device, CAN, 12-bit ADC
中文描述: 32-BIT, FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP80
封裝: 12 X 12 MM, 1.40 MM HEIGHT, PLASTIC, MS-026, SOT315-1, 80 PIN
文件頁數(shù): 61/74頁
文件大小: 1572K
代理商: LPC1751FBD80
LPC1759_58_56_54_52_51
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 29 March 2011
61 of 74
NXP Semiconductors
LPC1759/58/56/54/52/51
32-bit ARM Cortex-M3 microcontroller
Table 19.
Component
R
i1
13. DAC electrical characteristics (LPC1759/58/56/54 only)
The values of resistor components R
i1
and R
i2
vary with temperature and input voltage and are
process-dependent (see
Table 19
).
Parasitic resistance and capacitance from the pad are not included in this figure.
Fig 26. ADC interface to pins AD0[n]
ADC interface components
Range
2 k
to 5.2 k
Description
Switch-on resistance for channel selection switch. Varies with
temperature, input voltage, and process.
Switch-on resistance for the comparator input switch. Varies
with temperature, input voltage, and process.
Parasitic capacitance from the ADC block level.
Parasitic capacitance from the ADC block level.
Sampling capacitor.
R
i2
100
to 600
C1
C2
C3
750 fF
65 fF
2.2 pF
LPC17xx
AD0[n]
750 fF
65 fF
Cia
2.2 pF
Rvsi
Ri2
100
Ω
-
600
Ω
Ri1
2 k
Ω
- 5.2 k
Ω
V
SS
VEXT
002aaf197
ADC
COMPARATOR
BLOCK
C1
C3
C2
Table 20.
V
DDA
= 2.7 V to 3.6 V; T
amb
=
40
C to +85
C unless otherwise specified
Symbol
Parameter
E
D
differential linearity error
E
L(adj)
integral non-linearity
E
O
offset error
E
G
gain error
C
L
load capacitance
R
L
load resistance
DAC electrical characteristics
Conditions
Min
-
-
-
-
-
1
Typ
1
1.5
0.6
0.6
200
-
Max
-
-
-
-
-
-
Unit
LSB
LSB
%
%
pF
k
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