參數(shù)資料
型號(hào): LN671
廠商: PANASONIC CORP
元件分類: 紅外LED
英文描述: GaAlAs Infrared Light Emitting Diode
中文描述: 3.2 mm, 1 ELEMENT, INFRARED LED, 880 nm
文件頁數(shù): 1/2頁
文件大小: 43K
代理商: LN671
1
Infrared Light Emitting Diodes
LN671
GaAlAs Infrared Light Emitting Diode
1: Anode
2: Common Cathode
3: NC
4: Common Cathode
Unit : mm
10
5
10
5
1
1
1
±
0
4
±
0
4
1
±
0
1
±
0
2.54
±
0.1
1
2
4
3
1
±
0
1
±
0
5.0
±
0.1
5.3 max.
1.8
±
0.3
0.8
±
0.2
4-0.6
+0.1
0.2
+0.1
–0.05
4-0.5
±
0.15
Epin 3.2
Light source for distance measuring systems
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
130
70
1
3
–25 to +85
–30 to +100
Unit
mW
mA
A
V
C
C
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
f = 100 Hz, Duty cycle = 0.1 %
Features
High-power output, high-efficiency : P
O
= 10 mW (typ.)
Fast response and high-speed modulation capability :
t
r
, t
f
= 30 ns(typ.)
Small plastic package
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
P
O
λ
P
λ
V
F
I
R
t
r
t
f
θ
Conditions
min
6
typ
10
880
50
1.4
max
Unit
mW
nm
nm
V
μ
A
ns
ns
deg.
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Rise time
Fall time
Half-power angle
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
V
R
= 3V
I
FP
= 50mA
I
FP
= 50mA
1.8
10
30
30
50
The angle in which radiant intencity is 50%
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