參數(shù)資料
型號: LN77L
廠商: PANASONIC CORP
元件分類: 紅外LED
英文描述: GaAlAs Infrared Light Emitting Diode
中文描述: 5 mm, 1 ELEMENT, INFRARED LED, 860 nm
封裝: PLASTIC, LT5RL102-002, 2 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 40K
代理商: LN77L
1
Infrared Light Emitting Diodes
LN77L
GaAlAs Infrared Light Emitting Diode
2.54
2-0.8 max.
2-0.6
±
0.15
7
±
0
0
±
0
2
±
1
5
±
0
1
1
1
2
N
(
1: Anode
2: Cathode
Unit : mm
5.0
±
0.2
±
0
For optical control systems
Features
High-power output, high-efficiency : P
O
= 18 mW (typ.)
Fast response and high-speed modulation capability :
f
C
= 20 MHz (typ.)
Wide directivity :
θ
= 20 deg. (typ.)
Transparent epoxy resin package
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
190
100
1
3
–25 to +85
–30 to +100
Unit
mW
mA
A
V
C
C
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
t
w
= 10
μ
s, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
P
O
λ
P
λ
V
F
I
R
θ
f
C*
Conditions
min
10
typ
18
860
40
1.6
max
Unit
mW
nm
nm
V
μ
A
deg.
MHz
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Half-power angle
Cutoff frequency
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 100mA
V
R
= 3V
1.9
10
The angle in which radiant intencity is 50%
I
FP
= 50mA + 10mA
p-p
20
20
*
Frequency when modulation optical power decreases by 3dB from 1MHz
10 log P
O
(f
C
MHz)
= – 3
)
P
O
(1MHz)
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