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參數(shù)資料
| 型號(hào)： | LN78 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 紅外LED |
| 英文描述： | GaAlAs Infrared Light Emitting Diode |
| 中文描述： | 2.4 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| 封裝： | LSTLR102-002, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | LN78 |
1
Infrared Light Emitting Diodes
LN78
GaAlAs Infrared Light Emitting Diode
R0.6
1
2
R1.2
2-0.45
±
0.15
2-1.2
±
0.3
1.2
0.9
2.9
±
0.25
4.5
±
0.3
3
±
0
1
N
2
2
1
1.7
±
0.2
0.8
2.4
1: Cathode
2: Anode
Unit : mm
2.54
0.45
±
0.15
For optical control cystems
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
180
100
1
3
–25 to+85
–30 to +100
Unit
mW
mA
A
V
C
C
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
f = 100 Hz, Duty cycle = 0.1 %
Features
High-power output, high-efficiency : P
O
= 10 mW (typ.)
High-speed modulation capability : f
C
= 12 MHz
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
P
O
λ
P
λ
V
F
I
R
C
t
θ
f
C*
Conditions
min
6
typ
10
880
50
1.5
max
Unit
mW
nm
nm
V
μ
A
pF
deg.
MHz
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
Cutoff frequency
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 100mA
V
R
= 3V
V
R
= 0V, f = 1MHz
1.8
10
50
40
12
The angle in which radiant intencity is 50%
I
FP
= 50mA + 10mA
p-p
*
Frequency when modulation optical power decreases by 3dB from 1MHz.
10 log P
O
(f
C
MHz)
= – 3
)
P
O
(1MHz)
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