參數(shù)資料
型號(hào): LN69
廠商: PANASONIC CORP
元件分類: 紅外LED
英文描述: GaAs Infrared Light Emitting Diode
中文描述: 3 mm, 1 ELEMENT, INFRARED LED, 940 nm
封裝: PLASTIC, LT3LR1N02-001, 2 PIN
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 40K
代理商: LN69
1
Infrared Light Emitting Diodes
LN69
GaAs Infrared Light Emitting Diode
1: Anode
2: Cathode
Unit : mm
0.5
±
0.1
1
1
2
3.0
±
0.2
3.6
±
0.2
N
2-0.8 max.
2-0.5
±
0.1
4
±
0
1
1
5
±
0
1
±
1
(
2.54
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
e
λ
P
λ
V
F
I
R
C
t
θ
Conditions
min
3.5
typ
max
Unit
mW/sr
nm
nm
V
μ
A
pF
deg.
Cente radiant Intensity
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
I
F
= 20mA
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
V
R
= 3V
V
R
= 0V, f = 1MHz
940
50
1.3
1.5
10
35
15
The angle in which radiant intencity is 50%
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
ratings
75
50
1
3
–25 to +85
– 40 to +100
Unit
mW
mA
A
V
C
C
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
f = 100 Hz, Duty cycle = 0.1 %
For optical control systems
Features
High-power output, high-efficiency : I
e
= 3.5 mW/sr (min.)
Emitted light spectrum suited for silicon photodetectors :
λ
P
= 940 nm (typ.)
Good radiant power output linearity with respect to input current
Long lifetime, high reliability
3 plastic package
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