參數(shù)資料
型號(hào): LN66L(LN66(L))
英文描述: LN66L (LN66(L)) - GaAs Infrared Light Emitting Diode
中文描述: LN66L(LN66(長(zhǎng))) -砷化鎵紅外發(fā)光二極管
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 42K
代理商: LN66L(LN66(L))
2
LN66L
Infrared Light Emitting Diodes
I
F
— Ta
120
100
80
60
40
20
Ambient temperature Ta (C )
A
F
0
20
40
60
80
100
0
– 25
I
FP
— Duty cycle
10
2
10
1
10
–1
10
–2
Duty cycle (%)
P
F
10
–1
10
10
2
1
10
–3
10
–2
t
= 10
μ
s
Ta = 25C
I
F
— V
F
120
100
80
40
20
60
0
Forward voltage V
F
(V)
Ta = 25C
F
F
0
0.4
0.8
1.2
2.0
1.6
P
O
— Ta
10
1
Ambient temperature Ta (C )
I
F
= 50mA
R
P
O
– 40
0
40
80
120
10
–1
10
–2
λ
P
— Ta
1000
980
960
940
920
900
Ambient temperature Ta (C )
I
F
= 50mA
P
λ
P
– 40
0
40
80
120
Spectral characteristics
100
80
60
40
20
Wavelength
λ
(nm)
R
900
940
980
1020
1060
1100
0
860
I
= 50mA
Ta = 25C
V
F
— Ta
1.6
1.2
0.8
0.4
0
Ambient temperature Ta (C )
F
F
0
40
80
120
0
10
20
30
40
50
60
70
80
90
Directivity characteristics
P
O
— I
FP
10
3
10
2
10
1
Pulse forward current I
FP
(mA)
R
P
O
10
3
10
4
10
2
10
–2
10
–1
1
10
(1) t
= 10
μ
s
f = 100Hz
(2) DC
Ta = 25C
20
90
100
80
70
60
50
40
30
R
I
F
= 100mA
10mA
50mA
(1)
(2)
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