參數(shù)資料
型號: LLE16120X
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN microwave power transistor
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: METAL CERAMIC, SOT-437A, 3 PIN
文件頁數(shù): 5/12頁
文件大?。?/td> 74K
代理商: LLE16120X
1997 Feb 18
5
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16120X
List of components (see bias circuit)
Notes
1.
2.
In thermal contact with TR1.
In thermal contact with D.U.T.
COMPONENT
DESCRIPTION
VALUE
ORDERING INFORMATION
TR1
D1
D2
R1
R2
R3
P1
C1
C5, C6
L1
L2
transistor, BDT85 (or equivalent)
diode, BY239800 (or equivalent); note 1
diode, BY239800; note 2
resistor
resistor
resistor
potentiometer, 10 turns (sfernice)
electrolytic capacitor
feedthrough bypass capacitor
5 turns 0.5 mm copper wire with ferrite bead
5 turns 0.5 mm copper wire
100
3.3 k
56
4.7 k
10
μ
F, 40 V
1500 pF
Erie, ref. 1250-003
Fig.4 Prematching test circuit board.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity:
ε
r
= 10.
handbook, full pagewidth
MCD661
30 mm
40 mm
30 mm
40 mm
input
output
3
3
9.3
2.5
5
5
1.4
2x
0.5
2
1
0.5
10.2
2x
0.5
0.635
0.635
12.5
2
0.5
5.8
7
2
4.5
12.5
3
1
0.5
10
1
1.2
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