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參數資料
| 型號： | LLE16120X |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-437A, 3 PIN |
| 文件頁數： | 4/12頁 |
| 文件大?。?/td> | 74K |
| 代理商： | LLE16120X |
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16120X
THERMAL CHARACTERISTICS
Note
1.
See “Mounting recommendations in the General part of handbook SC19a”
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C in a common emitter class AB amplifier (note 1).
Note
1.
The test circuit is split into 2 independant halves each being 30
×
40 mm in size.
SYMBOL
PARAMETER
CONDITIONS
T
j
= 100
°
C
MAX.
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink note1
4.2
0.2
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
V
(BR)CER
V
(BR)CBO
V
(BR)EBO
h
FE
collector cut-off current
collector-emitter breakdown voltage
collector-base breakdown voltage
emitter-base breakdown voltage
DC current gain
V
CB
= 20 V; I
E
= 0
I
C
= 5 mA; R
BE
= 220
I
C
= 5 mA; I
B
= 0
I
E
= 5 mA; I
C
= 0
V
CE
= 3 V; I
C
= 1 A
30
45
3
15
1
100
mA
V
V
V
MODE OF
OPERATION
f
(GHz)
V
CE
(V)
I
CQ
(A)
P
L1
(W)
≥
11;
typ. 13
G
po
(dB)
≥
8.7;
typ. 10.8
η
C
(%)
Z
i
; Z
L
(
)
Class AB (CW)
1.65
24
0.1
typ. 45
see Figs 8 and 9
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