- 您現在的位置：買賣IC網 > PDF目錄369757 > LH28F640BFHE-PTTL80 Flash ROM PDF資料下載
參數資料
| 型號： | LH28F640BFHE-PTTL80 |
| 英文描述： | Flash ROM |
| 中文描述： | 閃存ROM |
| 文件頁數： | 44/56頁 |
| 文件大?。?/td> | 373K |
| 代理商： | LH28F640BFHE-PTTL80 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁當前第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁
LH28F160S5-L/S5H-L
- 44 -
SYMBOL
t
AVAV
PARAMETER
NOTE
MIN.
70
MAX.
MIN.
90
MAX.
MIN.
100
MAX.
Write Cycle Time
RP# High Recovery to WE#
Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
WP# V
IH
Setup to WE#
Going High
V
PP
Setup to WE# Going High
Address Setup to WE#
Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to STS Going Low
Write Recovery before Read
V
PP
Hold from Valid SRD,
STS High Z
WP# V
IH
Hold from Valid SRD,
STS High Z
NOTES :
1.
Read timing characteristics during block erase, full chip
erase, (multi) word/byte write and block lock-bit
configuration operations are the same as during read-
only operations. Refer to
Section 6.2.4
CHARACTERISTICS
" for read-only operations.
2.
Sampled, not 100% tested.
3.
Refer to
Table 3
for valid A
IN
and D
IN
for block erase,
full chip erase, (multi) word/byte write or block lock-bit
configuration.
4.
V
PP
should be held at V
PPH1
until determination of block
erase, full chip erase, (multi) word/byte write or block
lock-bit configuration success (SR.1/3/4/5 = 0).
ns
t
PHWL
2
1
1
1
μs
t
ELWL
t
WLWH
10
40
10
40
10
40
ns
ns
t
SHWH
2
100
100
100
ns
t
VPWH
2
100
100
100
ns
t
AVWH
3
40
40
40
ns
t
DVWH
t
WHDX
t
WHAX
t
WHEH
t
WHWL
t
WHRL
t
WHGL
3
40
5
5
10
30
40
5
5
10
30
40
5
5
10
30
ns
ns
ns
ns
ns
ns
ns
90
90
90
0
0
0
t
QVVL
2, 4
0
0
0
ns
t
QVSL
2, 4
0
0
0
ns
VERSIONS
V
CC
±0.25 V
V
CC
±0.5 V
(NOTE 5)
LH28F160S5H-L70
(NOTE 6)
LH28F160S5H-L10
(NOTE 6)
LH28F160S5H-L70
UNIT
V
CC
= 5.0±0.25 V, 5.0±0.5 V, T
A
= –40 to +85°C
"
AC
5.
See
Fig. 12
"
Transient Input/Output Reference
Waveform
" and
Fig. 14
"
Transient Equivalent Testing
Load Circuit
" (High Speed Configuration) for testing
characteristics.
See
Fig. 13
"
Transient Input/Output Reference
Waveform
" and
Fig. 14
"
Transient Equivalent Testing
Load Circuit
" (Standard Configuration) for testing
characteristics.
6.
6.2.5 AC CHARACTERISTICS - WRITE OPERATIONS (contd.)
(NOTE 1)
[LH28F160S5H-L]
相關PDF資料 |
PDF描述 |
|---|---|
| LH28F800BJB-PBTL10 | Flash ROM |
| LH28F800BJB-PBTL90 | Flash ROM |
| LH28F800BJB-PTTL10 | Flash ROM |
| LH28F800BJB-PTTL90 | Flash ROM |
| LH28F800BJE-PBTL10 | Flash ROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| LH28F640BFHE-PTTLHGA | 制造商:Sharp Microelectronics Corporation 功能描述:64M (4MX16) 3V, BOOT BLOCK, TOP, TSOP48, IND, HAZMAT - Trays |
| LH28F640BFHG-PBTLZ7 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:64M (x16) Flash Memory |
| LH28F640SP | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory |
| LH28F640SPHT-PL12A | 功能描述:閃存 64MB X8/X16 3V DUAL SUPPLY RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| LH28F640SPHT-PTL12 | 功能描述:IC FLASH 64MBIT 120NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
發(fā)布緊急采購，3分鐘左右您將得到回復。