參數(shù)資料
型號(hào): LH28F400SUN-LC12
廠商: Sharp Corporation
英文描述: 4Mbit(512Kbit x 8,256Kbit x 16) 3.3V Flash Memory
中文描述: 的4Mb(512Kbit x 8256千位× 16)3.3閃存
文件頁(yè)數(shù): 26/35頁(yè)
文件大?。?/td> 294K
代理商: LH28F400SUN-LC12
LH28F400SU-NC
4M (512K × 8, 256K × 16) Flash Memory
26
POWER-UP AND RESET TIMINGS
Figure 21. V
CC
Power-Up and RP
Reset Waveforms
SYMBOL
PARAMETER
MIN.
MAX.
UNITS
NOTE
t
PL5V
RP
Low to V
CC
at 4.5 V MIN.
0
μs
1
t
AVQV
Address Valid to Data Valid for
V
CC
= 5 V ±
10%
75
ns
2
t
PHQV
RP
High to Data Valid for V
CC
= 5 V ±
10%
430
ns
2
NOTES:
CE
and OE
are switched low after Power-Up.
1. The power supply may start to switch concurrently with RP
going Low. RP
is required to stay low, until V
CC
stays at
recommended operating voltage.
2. The address access time and RP
high to data valid time are shown for 5.0 V V
CC
operation. Refer to the
AC Characteristics Read Only Operations also.
28F400SUT-NC60-19
ADDRESS (A)
RP (P)
DATA (Q)
t
PL5V
V
CC
(5 V)
VALID
VALID
5.0 V OUTPUTS
4.5 V
5.0 V
t
PHQV
t
AVQV
V
CC
POWER UP
0 V
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