參數(shù)資料
型號: LH28F400SUN-LC12
廠商: Sharp Corporation
英文描述: 4Mbit(512Kbit x 8,256Kbit x 16) 3.3V Flash Memory
中文描述: 的4Mb(512Kbit x 8256千位× 16)3.3閃存
文件頁數(shù): 10/35頁
文件大?。?/td> 294K
代理商: LH28F400SUN-LC12
LH28F400SU-NC
4M (512K × 8, 256K × 16) Flash Memory
10
Figure 6. Word/Byte Writes with Compatible Status Register
START
BUS
OPERATION
COMMAND
COMMENTS
WRITE 40H or 10H
WRITE
DATA/ADDRESS
CSR.7 =
0
1
0
1
0
1
CSR FULL STATUS
CHECK IF DESIRED
OPERATION
COMPLETE
CLEAR CSRD
RETRY/ERROR
RECOVERY
DATA WRITE
SUCCESSFUL
V
LOW
DETECT
READ CSRD
(see above)
CSR.4, 5 =
CSR.3 =
Write
Write
Read
Standby
Word/Byte
Write
D = 40H or 10H
A = X
D = WD
A = WA
Q = CSRD
Toggle CE or OE
to update CSRD.
A = X
Repeat for subsequent Word/Byte Writes.
CSR Full Status Check can be done after each Word/Byte Write,
or after a sequence of Word/Byte Writes.
Write FFH after the last operation to reset device
to read array mode.
See Command Bus Cycle notes for description of codes.
Check CSR.7
1 = WSM Ready
0 = WSM Busy
BUS
OPERATION
COMMAND
CSR FULL STATUS CHECK PROCEDURE
COMMENTS
Standby
Standby
Check CSR.4, 5
1 = Data Write Unsuccessful
0 = Data Write Successful
Check CSR.3
1 = V
PP
Low Detect
0 = V
PP
OK
CSR.3, 4, 5 should be cleared, if set, before further attempts
are initiated.
28F400SUT-NC60-4
READ COMPATIBLE
STATUS REGISTER
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