參數(shù)資料
型號(hào): LH28F400SUN-LC12
廠商: Sharp Corporation
英文描述: 4Mbit(512Kbit x 8,256Kbit x 16) 3.3V Flash Memory
中文描述: 的4Mb(512Kbit x 8256千位× 16)3.3閃存
文件頁(yè)數(shù): 13/35頁(yè)
文件大?。?/td> 294K
代理商: LH28F400SUN-LC12
4M (512K × 8, 256K × 16) Flash Memory
LH28F400SU-NC
13
Figure 9. Block Locking Scheme
START
BUS
OPERATION
COMMAND
COMMENTS
CSR.7 =
0
1
OPERATION COMPLETE
Read
Read
Read
Write
Reset
Write Protect
Q = CSRD
Toggle CE or OE
to update CSRD.
1 = WSM Ready
0 = WSM Busy
D = D0H
A = BA
Q = CSRD
Toggle CE or OE
to update CSRD.
1 = WSM Ready
0 = WSM Busy
Q = CSRD
Toggle CE or OE
to update CSRD.
1 = WSM Ready
0 = WSM Busy
NOTE:
See CSR Full Status Check for Data-Write operation.
If CSR.4, 5 is set, as it is command sequence error,
should be cleared before further attempts are initiated.
Write FFH after the last operation to reset device to read
array mode.
See Command Bus Definitions for description of codes.
After Write D = 47H A = X,
Write D = D0H A = 0FFH
Write
Lock Block
Confirm
Set
Write Protect
D = 77H
A = X
After Write D = 57H A = X,
Write D = D0H A = 0FFH
Write
Write
28F400SUT-NC60-7
READ COMPATIBLE
STATUS REGISTER
RESET WP
READ COMPATIBLE
STATUS REGISTER
WRITE D0H AND
BLOCK ADDRESS
READ COMPATIBLE
STATUS REGISTER
CSR.7 =
CSR.7 =
CSR.4, 5 =
0
1
1
0
1
0
LOCK
ANOTHER
BLOCK
NO
YES
(NOTE)
WRITE 77H
SET WP
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