參數(shù)資料
型號(hào)： LH28F400SUN-LC12
廠商： Sharp Corporation
英文描述： 4Mbit(512Kbit x 8,256Kbit x 16) 3.3V Flash Memory
中文描述： 的4Mb（512Kbit x 8256千位× 16）3.3閃存
文件頁(yè)數(shù)： 22/35頁(yè)
文件大?。?/td> 294K
代理商： LH28F400SUN-LC12
LH28F400SU-NC
4M (512K × 8, 256K × 16) Flash Memory
22
DC Characteristics (Continued)
V
CC
= 5.0 V ± 0.5 V, T
A
= 0°C to +70°C
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
CC
= 5.0 V, V
PP
= 5.0 V, T = 25°C. These currents are valid for all
product versions (package and speeds).
2. I
CCES
is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of
I
CCES
and I
CCR
.
3. Automatic Power Saving (APS) reduces I
CCR
to less than 2 mA in Static operation.
4. CMOS inputs are either V
CC
± 0.2 V or GND ± 0.2 V. TTL Inputs are either V
IL
or V
IH
.
5. Only to RP
, V
IH
(MIN.) = 2.4 V at VTTL-level input.
SYMBOL
PARAMETER
TYP.
MIN.
MAX.
UNITS
TEST CONDITIONS
NOTE
I
PPR
V
PP
Read Current
200
μA
V
PP
> V
CC
1
I
PPW
V
PP
Write Current
15
35
mA
V
PP
= V
PPH
, Word/Byte
Write in Progress
1
I
PPE
V
PP
Erase Current
20
40
mA
V
PP
= V
PPH
,
Block Erase in Progress
1
I
PPES
V
PP
Erase Suspend
Current
65
200
μA
V
PP
= V
PPH
,
Block Erase Suspended
1
V
IL
Input Low Voltage
-0.5
0.8
V
V
IH
Input High Voltage
2.0
V
CC
+ 0.5
V
5
V
OL
Output Low Voltage
0.45
V
V
CC
= V
CC
MIN. and
I
OL
= 5.8 mA
V
OH1
Output High Voltage
0.85 V
CC
V
I
OH
= 2.5 mA
V
CC
= V
CC
MIN.
V
OH2
V
CC
- 0.4
V
I
OH
= 100 μA
V
CC
= V
CC
MIN.
V
PPL
V
PP
during Normal
Operations
0.0
5.5
V
V
PPH
V
PP
during Write/Erase
Operations
5.0
4.5
5.5
V
V
LKO
V
CC
Erase/Write
Lock Voltage
1.4
V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F400SUN-LC15 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
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LH28F400SUN-NC80 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory
LH28F400SUT-LC12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
LH28F400SUT-LC15 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
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