參數(shù)資料
型號(hào)： LH28F160S3HNS-L12
元件分類： EEPROM
英文描述： EEPROM
中文描述： EEPROM的
文件頁(yè)數(shù)： 27/56頁(yè)
文件大?。?/td> 373K
代理商： LH28F160S3HNS-L12
LH28F160S5-L/S5H-L
- 27 -
Start
Write E8H,
Start Address
Read
Status Register
0
XSR.7 =
1
Write Word or Byte Count (N)_1,
Start Address
Write Buffer Data,
Start Address
X = 0
Write Buffer Data,
Device Address
NOTES :
1. Byte or word count values on DQ
0-7
are loaded into the
count register.
2. Write buffer contents will be programmed at the start
address.
3. Align the start address on a write buffer boundary for
maximum programming performance.
4. The device aborts the Multi Word/Byte Write command
if the current address is outside of the original block address.
5. The status register indicates an "improper command
sequence" if the Multi Word/Byte Write command is aborted.
Follow this with a Clear Status Register command.
SR full status check can be done after each multi word/byte
write or after a sequence of multi word/byte writes.
Write FFH after the last multi word/byte write operation to
place device in read array mode.
BUS
OPERATION
Write
Read
Standby
Write
(NOTE 1)
COMMAND
Setup Multi
Word/Byte Write
COMMENTS
Data = E8H
Addr = Start Address
Data = Word or Byte Count (N)_1
Addr = Start Address
Write
(NOTE 2, 3)
Data = Buffer Data
Addr = Start Address
Write
(NOTE 4, 5)
Data = Buffer Data
Addr = Device Address
Write
Data = D0H
Addr = X
Read
Status Register Data
Standby
Extended Status Register Data
Check SR.7
1 = WSM Ready
0 = WSM Busy
Multi Word/Byte
Write Abort
Yes
No
No
X = N
No
Write Buffer
Time-Out
Yes
Full Status
Check if Desired
SR.7 =
Multi Word/Byte
Write Complete
0
1
X = X + 1
Write D0H
Read
Status Register
Yes
No
Yes
No
Suspend Multi Word/Byte
Write Loop
Suspend
Multi Word/Byte
Write
Write Another
Block Address
Check XSR.7
1 = Multi Word/Byte Write Ready
0 = Multi Word/Byte Write Busy
Yes
Abort
Buffer Write
Command
Another
Buffer
Write
Fig. 6 Automated Multi Word/Byte Write Flowchart
相關(guān)PDF資料
PDF描述
LH28F160S3HR-L10 x8/x16 Flash EEPROM
LH28F160S3HR-L13 EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC
LH28F160S3HT-L10 x8/x16 Flash EEPROM
LH28F160S3HT-L13 EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC
LH28F160S3NS-L13 EEPROM|FLASH|1MX16/2MX8|CMOS|SOP|56PIN|PLASTIC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F160S3HNS-L13 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY
LH28F160S3HNS-TV 功能描述:IC FLASH 16MBIT 100NS 56SSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
LH28F160S3HR-L10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
LH28F160S3HR-L13 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC
LH28F160S3HT-L10 制造商:Sharp Microelectronics Corporation 功能描述:NOR Flash Parallel 3V 16Mbit 2M/1M x 8bit/16bit 100ns 56-Pin TSOP
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