參數(shù)資料
型號: LH28F160S3HNS-L12
元件分類: EEPROM
英文描述: EEPROM
中文描述: EEPROM的
文件頁數(shù): 23/56頁
文件大?。?/td> 373K
代理商: LH28F160S3HNS-L12
LH28F160S5-L/S5H-L
- 23 -
Table 13.1 Status Register Definition
ECBLBS
WSBLBS
5
4
WSMS
7
BESS
6
VPPS
3
WSS
2
DPS
1
R
0
SR.7 = WRITE STATE MACHINE STATUS (WSMS)
1 = Ready
0 = Busy
SR.6 = BLOCK ERASE SUSPEND STATUS (BESS)
1 = Block Erase Suspended
0 = Block Erase in Progress/Completed
SR.5 =
ERASE AND CLEAR BLOCK LOCK-BITS STATUS
(ECBLBS)
1 = Error in Erase or Clear Block Lock-Bits
0 = Successful Erase or Clear Block Lock-Bits
SR.4 =
WRITE AND SET BLOCK LOCK-BIT STATUS
(WSBLBS)
1 = Error in Write or Set Block Lock-Bit
0 = Successful Write or Set Block Lock-Bit
SR.3 = V
PP
STATUS (VPPS)
1 = V
PP
Low Detect, Operation Abort
0 = V
PP
OK
SR.2 = WRITE SUSPEND STATUS (WSS)
1 = Write Suspended
0 = Write in Progress/Completed
SR.1 = DEVICE PROTECT STATUS (DPS)
1 = Block Lock-Bit and/or WP# Lock Detected,
Operation Abort
0 = Unlock
SR.0 =
RESERVED FOR FUTURE ENHANCEMENTS (R)
NOTES :
Check STS or SR.7 to determine block erase, full chip erase,
(multi) word/byte write or block lock-bit configuration
completion.
SR.6-0 are invalid while SR.7 = "0".
If both SR.5 and SR.4 are "1"s after a block erase, full chip
erase, (multi) word/byte write, block lock-bit configuration or
STS configuration attempt, an improper command sequence
was entered.
SR.3 does not provide a continuous indication of V
PP
level.
The WSM interrogates and indicates the V
PP
level only after
block erase, full chip erase, (multi) word/byte write or block
lock-bit configuration command sequences. SR.3 is not
guaranteed to reports accurate feedback only when V
PP
V
PPH1
.
SR.1 does not provide a continuous indication of block lock-bit
values. The WSM interrogates block lock-bit, and WP# only
after block erase, full chip erase, (multi) word/byte write or
block lock-bit configuration command sequences. It informs
the system, depending on the attempted operation, if the block
lock-bit is set and/or WP# is not V
IH
. Reading the block lock
configuration codes after writing the Read Identifier Codes
command indicates block lock-bit status.
SR.0 is reserved for future use and should be masked out
when polling the status register.
Table 13.2 Extended Status Register Definition
R
R
5
4
SMS
7
R
6
R
3
R
2
R
1
R
0
XSR.7 = STATE MACHINE STATUS (SMS)
1 = Multi Word/Byte Write available
0 = Multi Word/Byte Write not available
XSR.6-0 =
RESERVED FOR FUTURE ENHANCEMENTS (R)
NOTES :
After issue a Multi Word/Byte Write command : XSR.7
indicates that a next Multi Word/Byte Write command is
available.
XSR.6-0 are reserved for future use and should be masked
out when polling the extended status register.
相關(guān)PDF資料
PDF描述
LH28F160S3HR-L10 x8/x16 Flash EEPROM
LH28F160S3HR-L13 EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC
LH28F160S3HT-L10 x8/x16 Flash EEPROM
LH28F160S3HT-L13 EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC
LH28F160S3NS-L13 EEPROM|FLASH|1MX16/2MX8|CMOS|SOP|56PIN|PLASTIC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F160S3HNS-L13 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY
LH28F160S3HNS-TV 功能描述:IC FLASH 16MBIT 100NS 56SSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M(8Mx32) 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA(8x13) 包裝:托盤 其它名稱:Q2841869
LH28F160S3HR-L10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
LH28F160S3HR-L13 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC
LH28F160S3HT-L10 制造商:Sharp Microelectronics Corporation 功能描述:NOR Flash Parallel 3V 16Mbit 2M/1M x 8bit/16bit 100ns 56-Pin TSOP