- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄369759 > LH28F160S3HNS-L12 EEPROM PDF資料下載
參數(shù)資料
| 型號(hào)： | LH28F160S3HNS-L12 |
| 元件分類(lèi)： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁(yè)數(shù)： | 26/56頁(yè) |
| 文件大小： | 373K |
| 代理商： | LH28F160S3HNS-L12 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)當(dāng)前第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)
LH28F160S5-L/S5H-L
- 26 -
Word/Byte Write
Complete
Start
Write 70H
Read
Status Register
0
0
Yes
No
SR.7 =
1
SR.7 =
1
Write 40H or 10H,
Address
Write Word/Byte
Data and Address
Suspend Word/Byte
Write Loop
Suspend
Word/Byte
Write
Read
Status Register
Full Status
Check if Desired
BUS
OPERATION
COMMAND
COMMENTS
Standby
Check SR.1
1 = Device Protect Detect
WP# = V
IL
, Block Lock-Bit is Set
Only required for systems implement-
ing block lock-bit configuration
SR.4, SR.3 and SR.1 are only cleared by the Clear Status
Register command in cases where multiple locations are
written before full status is checked.
If error is detected, clear the status register before attempting
retry or other error recovery.
Repeat for subsequent word/byte writes.
SR full status check can be done after each word/byte write
or after a sequence of word/byte writes.
Write FFH after the last word/byte write operation to place
device in read array mode.
Standby
Check SR.3
1 = V
PP
Error Detect
Standby
Check SR.4
1 = Data Write Error
BUS
OPERATION
Write
Read
Standby
Standby
COMMAND
Read Status
Register
COMMENTS
Data = 70H
Addr = X
Status Register Data
Status Register Data
Check SR.7
1 = WSM Ready
0 = WSM Busy
Check SR.7
1 = WSM Ready
0 = WSM Busy
Word/Byte
Write
Setup Word/
Byte Write
Write
Write
Read
Data = Data to be Written
Addr = Location to be Written
Data = 40H or 10H
Addr = Location to be Written
SR.3 =
FULL STATUS CHECK PROCEDURE
Read Status Register
Data (See Above)
V
PP
Range Error
1
0
SR.1 =
Device Protect
Error
1
0
Word/Byte Write
Successful
SR.4 =
Word/Byte Write
Error
1
0
Fig. 5 Automated Word/Byte Write Flowchart
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F160S3HR-L10 | x8/x16 Flash EEPROM |
| LH28F160S3HR-L13 | EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC |
| LH28F160S3HT-L10 | x8/x16 Flash EEPROM |
| LH28F160S3HT-L13 | EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC |
| LH28F160S3NS-L13 | EEPROM|FLASH|1MX16/2MX8|CMOS|SOP|56PIN|PLASTIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F160S3HNS-L13 | 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY |
| LH28F160S3HNS-TV | 功能描述:IC FLASH 16MBIT 100NS 56SSOP RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤(pán) 其它名稱(chēng):Q2841869 |
| LH28F160S3HR-L10 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8/x16 Flash EEPROM |
| LH28F160S3HR-L13 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC |
| LH28F160S3HT-L10 | 制造商:Sharp Microelectronics Corporation 功能描述:NOR Flash Parallel 3V 16Mbit 2M/1M x 8bit/16bit 100ns 56-Pin TSOP |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。