參數(shù)資料
型號: LH28F020SU-L
廠商: Sharp Corporation
英文描述: 2M (256K 】 8) Flash Memory
中文描述: 200萬(256K】8)閃存
文件頁數(shù): 28/31頁
文件大?。?/td> 245K
代理商: LH28F020SU-L
LH28F020SU-L
2M (256K × 8) Flash Memory
28
Figure 19. Alternate AC Waveforms for Command Write Operations
ADDRESSES (A)
(NOTE 1)
V
IH
V
IL
A
IN
D
IN
D
IN
D
IN
D
IN
D
OUT
WE (W)
V
IH
V
IL
OE (G)
V
IH
V
IL
CE (E)
V
IH
V
IL
DATA (D/Q)
V
IH
V
IL
t
AVAV
t
EHGL
t
EHEL
t
ELEH
t
DVEH
t
QVVL
t
AVEH
t
EHAX
t
WLEL
t
EHWH
t
EHQV 1, 2
t
GHEL
t
EHDX
t
VPEH
28F020SUL15-18
(NOTE 2)
HIGH-Z
WRITE DATA-WRITE
OR ERASE
SETUP COMMAND
WRITE VALID
ADDRESS AND DATA
(DATA-WRITE) OR
ERASE CONFIRM
COMMAND
AUTOMATED
DATA-WRITE
OR ERASE
DELAY
NOTES:
1. This address string depicts Data-Write/Erase cycles with corresponding verification via CSRD.
2. This cycle is invalid when using CSRD for verification during Data-Write/Erase operations.
V
PP
(V)
V
PPH
V
PPL
READ
COMPATIBLE
STATUS
REGISTER DATA
相關(guān)PDF資料
PDF描述
LH28F020SU-N 2M (256K 】 8) Flash Memory
LH28F040SUTD-Z4 4M (512K 】 8) Flash Memory
LH28F160BHE-TTL90 16M (x8/x16) Flash Memory
LH28F160BJE-BTL90 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲器)
LH28F160BJE-TTL70 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F020SU-N 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:2M (256K 】 8) Flash Memory
LH28F020SUN-L12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
LH28F032SUTD-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM Module
LH28F040SUTD-Z4 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8) Flash Memory
LH28F0I6SCT-L95 制造商:Sharp Microelectronics Corporation 功能描述: