參數(shù)資料
型號: LH28F020SU-L
廠商: Sharp Corporation
英文描述: 2M (256K 】 8) Flash Memory
中文描述: 200萬(256K】8)閃存
文件頁數(shù): 24/31頁
文件大小: 245K
代理商: LH28F020SU-L
LH28F020SU-L
2M (256K × 8) Flash Memory
24
SYMBOL
PARAMETER
MIN.
MAX.
UNITS
NOTE
t
WLPL
WE Low to V
CC
at 3.0 V MIN.
5
μs
1
t
AVQV
Address Valid to Data Valid for
V
CC
= 3.3 V ± 0.3 V
150
ns
2
t
PHQV
WE High to Data Valid for V
CC
= 3.3 V ± 0.3 V
620
ns
2
t
ELRS
CE
Setup to WE Going Low
100
ns
t
GLRS
OE
Setup to WE Going Low
100
ns
t
EHRS
CE
Hold from WE Going High
100
ns
t
GHRS
OE
Hold from WE Going High
100
ns
POWE
R-UP AND RESET TIMINGS
NOTES:
CE
and OE
are switched low after Power-Up.
1. Chip reset is enabled when the low state of all CE
, OE
and WE
exceeds 5 μs.
Especially when you will power on the chip, execute an above chip reset sequence for a protection from noise.
2. These values are shown for 3.3 V V
CC
operation. Refer to the AC Characteristics Read Only Operations also.
Figure 17. V
CC
Power-Up and Reset Waveforms
28F020SUL15-16
t
PHQV
t
WLPL
t
GLRS
t
ELRS
t
EHRS
t
GHRS
VALID
VALID
3.3 V OUTPUTS
3.3 V
3.0 V
t
AVQV
0 V
3.3 V
CE (E)
OE (G)
WE (W)
ADDRESS (A)
DATA (Q)
V
CC
(5 V)
V
CC
POWER UP
相關(guān)PDF資料
PDF描述
LH28F020SU-N 2M (256K 】 8) Flash Memory
LH28F040SUTD-Z4 4M (512K 】 8) Flash Memory
LH28F160BHE-TTL90 16M (x8/x16) Flash Memory
LH28F160BJE-BTL90 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲器)
LH28F160BJE-TTL70 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F020SU-N 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:2M (256K 】 8) Flash Memory
LH28F020SUN-L12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
LH28F032SUTD-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM Module
LH28F040SUTD-Z4 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8) Flash Memory
LH28F0I6SCT-L95 制造商:Sharp Microelectronics Corporation 功能描述: