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參數(shù)資料
| 型號： | LD1106S |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | High Performance N-Channel POWERJFET with Schottky Diode |
| 中文描述： | 高性能N溝道POWERJFET與肖特基二極管 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 764K |
| 代理商： | LD1106S |
Typical Operating Characteristics
(TA = +25
°
C, unless otherwise noted.)
Figure 7 – R
DSON
Temperature Coefficient
Normalized Rdson vs Temp at ID=-20A
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
0
20
40
60
80
100
120
140
Temp(C)
N
0.0
5.0
10.0
15.0
20.0
25.0
0
0.5
0.1
0.15
0.2
Vds, Drain-to-Source Voltage (V)
IG=5mA
IG=100mA
I
IG=1mA
IG=10mA
IG=20mA
IG=40mA
Figure 8 – On-Region Characteristics
I
Figure 9 – Schottky Diode Voltage vs Current
Figure 11 – Total Power Dissipation Figure 12 – Normalized Thermal Response
Lovoltech, Inc. -
3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1106S
ID vs VDS, Schottky Diode of LD103SG6
at 25oRoom Temp
-25
-20
-15
-10
-5
0
-1.2
-1.1 -1.0
-0.9 -0.8
-0.7 -0.6
-0.5
-0.4 -0.3
-0.2 -0.1
0.0
VDS(V)
1
10
100
0.1
1
10
100
Vds, Drain-to-Source Voltage (V)
Thermal Limit
Package Limit
100
μ
s
1ms
DC
5
μ
μ
s
10ms
°
Tc = 2
5
C
I
Rdson Limit
Ig = 40mA
Single Pulse
Figure 10 – Safe Operating Area
Total Power Dissipation (W)
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
Temperature (C)
P
ZthJA = f(tp) (parameter D= tp/T)
1.E-02
1.E-01
1.E+00
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
tp (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
2.
Peak Tj = P(pk)*Z
thJA
+ T
A
T
tp
P(pk)
Z
1.
Duty Factor D = tp/T
Note:
Product Specification
4
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