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參數(shù)資料
| 型號： | LD1106S |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | High Performance N-Channel POWERJFET with Schottky Diode |
| 中文描述： | 高性能N溝道POWERJFET與肖特基二極管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 764K |
| 代理商： | LD1106S |
Added Fast Recovery Schottky Diode in same package
Applications
DC-DC Converters for DDR and Graphic designs
Synchronous Rectifiers
PC Motherboard Converters
Step-down power supplies
Brick Modules
VRM Modules
DPAK Pin Assignments
Pin Definitions
Pin Number
Pin Name
Pin Function Description
1
Gate
Gate.
Transistor Gate
2
Drain
Drain.
Transistor Drain
3
Source
Source.
Transistor Source
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Drain-to-Source Avalanche Energy at 25
°
C
(V
DD
= 5V
DC
, IL=30A
PK
, L=0.3mH, R
G
=100
)
Junction Temperature
Storage Temperature
Lead Soldering Temperature, 10 seconds
Power Dissipation (Derated at 25
°
C on large heat sink)
LD1106S.Rev 0.92 – AD 12-04
PWRLITE LD1106S
High Performance N-Channel
P
OWERJFET
TM
with Schottky Diode
Features
Trench Power JFET with low threshold voltage Vth.
Device fully “ON” with Vgs = 0.7V
Optimum for “Low Side” Buck Converters
Optimized for Secondary Rectification in isolated DC-DC
Low Rg and low Cds for high speed switching
No “Body Diode”; extremely low Cds
Description
The Power JFET transistor from Lovoltech is a device that
presents a Low Rdson allowing for improved efficiencies in DC-
DC switching applications. The device is designed with a low
threshold such that drivers can operate at 5V, which reduces the
driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which
minimizes the required dead time. The transistor “No Body
Diode” provides a very low associated parasitic capacitance Cds.
A Schottky Diode is added for applications where a freewheeling
diode is required. Ringing is also reduced so that a lower voltage
device may be a better solution.
with Schottky Diode
G
S
D
S
D
G
N – Channel Power JFET
Product Summary
Rdson (
)
0.009
V
DS
(V)
15V
I
D
(A)
30
Symbol
V
DS
V
GS
V
GD
I
D
I
D
E
AS
Ratings
15
-10
-18
30
60
120
Units
V
V
V
A
A
mJ
T
J
T
STG
T
P
D
-55 to 150
°
C
-65 to 150
°
C
260
°
C
60
°
C
°
C
°
C
W
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