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參數(shù)資料
| 型號(hào)： | LD1106S |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | High Performance N-Channel POWERJFET with Schottky Diode |
| 中文描述： | 高性能N溝道POWERJFET與肖特基二極管 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 764K |
| 代理商： | LD1106S |
Thermal Resistance
Symbol
Parameter
DPAK
Ratings
85
2.0
Units
R
Θ
JA
R
Θ
JC
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
°
C/W
°
C/W
Electrical Specifications
(TA = +25
°
C, unless otherwise noted.)
The
φ
denotes a specification which apply over the full operating temperature range.
Symbol
Parameter
Static
BV
DSX
Breakdown Voltage
Drain to Source
BV
GDO
Breakdown Voltage
Gate to Drain
BV
GSO
Breakdown Voltage
Gate to Source
R
DS(ON
)
Static Drain to Source
1
On
Resistance (Current flows
drain-to-source) See Fig. 1
V
GS(TH)
Gate Threshold Voltage
Dynamic
Q
G
Total Gate Charge
Q
GD
Gate to Drain Charge
Q
GS
Gate to Source Charge
Q
SW
Switching Charge
R
G
Gate Resistance
T
D(ON
)
Turn-on Delay Time
T
R
Rise Time
T
D(OFF)
Turn-off Delay
T
F
Fall Time
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
GS
Gate-Source Capacitance
C
GD
Gate-Drain Capacitance
C
DS
Drain-Source Capacitance
Schottky Diode
I
R
Reverse Leakage
V
F
Forward Voltage
V
F
Forward Voltage
V
F
Forward Voltage
Qrr
Reverse Recovery Charge
Notes:
1.
Pulse width <= 500
μ
s, duty cycle < = 2%
Conditions
Min.
15
Typ.
Max.
Units
V
I
D
= 0.5 mA
V
GS
= -4 V
I
G
= -50
μ
A
φ
φ
-18
V
I
G
= -1 mA
φ
-12
-10
V
I
G
= 40 mA, I
D
=10A
I
G
= 10 mA, I
D
=10A
I
G
= 5 mA, I
D
=10A
V
DS
=0.1 V, I
D
=250
μ
A
V
Drive
=5V, I
D
=10A,V
DS
=15V
V
DD
=12V, I
D
=10A
V
Drive
= 5 V
Clamped Inductive Load
5.5
6
7
11
6.5
1.0
7.5
1
5
10
2
8
1600
450
1100
400
110
0.25
750
1100
4
8
9
m
m
mV
nC
nC
nC
nC
ns
φ
φ
-1200
-500
V
DS
=10V, V
GS
= -5 V, 1MHz.
pF
V
R
=15V
I
F
= 1 A
I
F
= 10 A
I
F
= 20 A
I
s
= 20 A di/dt = 200A/us,
mA
mV
mV
mV
nC
0.5
400
900
Lovoltech, Inc. -
3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1106S
Product Specification
2
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