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參數(shù)資料
| 型號： | LD1106S |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | High Performance N-Channel POWERJFET with Schottky Diode |
| 中文描述： | 高性能N溝道POWERJFET與肖特基二極管 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 764K |
| 代理商： | LD1106S |
Typical Operating Characteristics
(TA = +25
°
C, unless otherwise noted.)
Figure 1 – R
DSON
vs Gate Current at I
D
– 10A
Total Gate Charge curves
-5
-4
-3
-2
-1
0
1
2
0
5
10
15
20
25
QtotG(nC)
DC Charges Region
Region
V
Capacitive
Charges
RDS(ID=-10A) vs IG, Pulsed at Room Temperature.
0.0070
0.0072
0.0074
0.0076
0.0078
0.0080
0.0082
0.0084
0.0086
0.0088
0.0090
0.0092
0.0094
0.0096
0.001
0.010
0.100
1.000
IG(A)
Lot 3
Lot 2
R
Lot 1
Figure 2 – Total Gate Charge
A
I
Figure 3 – Breakdown Voltage Vds vs Id
Figure 5 – I
G
vs Gate Voltage V
GS
BVds plot: Id vs Vds for Vgs=-4V
0.00E+00
2.00E-04
4.00E-04
6.00E-04
8.00E-04
1.00E-03
1.20E-03
1.40E-03
0
4
8
12
16
20
24
Vds(V)
at Room Temp
0
0
250
500
750
1000
1250
1500
1750
0
0
5
5
10
15
20
20
25
VDSV)
C
Ciss
Crss
Capacitance vs VDS, VGS=-4V
Coss
Figure 4 – Capacitance vs Drain Voltage Vds
IG vs VGS, Source and Drain Grounded.
LD103SG6, at 25'C
0.E+00
1.E-02
2.E-02
3.E-02
4.E-02
5.E-02
6.E-02
7.E-02
8.E-02
9.E-02
1.E-01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
VGS(V)
I
IG vs VGS, Drain Open
Room Temp
-1.3E-03
-1.1E-03
-9.0E-04
-7.0E-04
-5.0E-04
-3.0E-04
-1.0E-04
1.0E-04
3.0E-04
5.0E-04
-14
-12
-10
-8
-6
-4
-2
0
2
VGSV)
I
Figure 6 – Typical Gate Voltage
Characteristic
Lovoltech, Inc. -
3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1106S
Product Specification
3
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