參數(shù)資料
型號(hào): LC35V1000BM
廠商: Sanyo Electric Co.,Ltd.
英文描述: Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM
中文描述: 異步硅門100萬(131072字× 8位)的SRAM
文件頁數(shù): 4/9頁
文件大小: 178K
代理商: LC35V1000BM
No. 7056-4/9
LC35V1000BM, BTS-70U
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Supply volgate
V
CC
V
IH
V
IL
3.0
3.3
3.6
V
High-level input voltage
0.8V
CC
–0.3
*
V
CC
+ 0.3
0.2V
CC
V
Low-level input voltage
V
DC Allowable Operating Range
at Ta = –40 to +85°C
Note:
*
The minimum value is –2.0 V for pulse width under 30 ns.
Note:
*
Reference values when V
CC
= 3.0 V and Ta = 25°C.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Input leakage current
I
LI
V
IN
= 0 to V
CC
V
CE1
= V
IH
or V
CE2
= V
IL
or V
OE
= V
IH
or
V
WE
= V
IL
, V
I/O
= 0 to V
CC
V
OH1
= –2.0 mA
V
OH2
= –100 μA
V
OL1
= 2.0 mA
V
OL2
= –100 μA
V
CE1
= V
IL
, V
CE2
= V
IH
, I
I/O
= 0 mA, V
IN
= V
IH
or V
IL
V
CE1
= V
IL
, V
CE2
= V
IH
,
I
I/O
= 0 mA, V
IN
= V
IH
or V
IL
, DUTY100%
V
CE2
0.2 V or
(V
CE1
V
CC
– 0.2 V,
V
CE2
V
CC
– 0.2 V)
V
CE1
= V
IH
or V
CE2
= V
IL
, V
IN
= 0 to V
CC
–1.0
+1.0
μA
I/O leakage current
I
LO
–1.0
+1.0
μA
Outpu high-level voltage
V
OH1
V
OH2
V
OL1
V
OL2
I
CCA2
V
CC
– 0.4
V
CC
– 0.1
V
V
Outpu low-level voltage
0.4
V
0.1
V
Operating supply current
1.2
mA
(CMOS inputs)
I
CCA3
min cycle
25
mA
1 μs cycle
Ta
85°C
Ta
70°C
Ta
25°C
2
Standby mode supply current
20
(V
CC
– 0.2 V/0.2 V inputs)
I
CCS1
10
μA
0.05
(CMOS inputs)
I
CCS2
0.4
mA
DC Electrical Characteristics
at Ta = –40 to +85°C, V
CC
= 3.0 to 3.6 V
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