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參數(shù)資料
| 型號(hào)： | LC35V256ET-70W |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | 256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| 中文描述： | 256K（32K字× 8位）的SRAM控制引腳：OE和行政長官 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 46K |
| 代理商： | LC35V256ET-70W |
Ordering number : ENN6303
12800RM (OT) No. 6303-1/6
Overview
The LC35V256EM-70W and LC35V256ET-70W are
asynchronous silicon-gate CMOS SRAMs with a 32768-
word by 8-bit structure. These are full-CMOS devices
with 6 transistors per memory cell, and feature ultralow-
voltage operation, a low operating current drain, and an
ultralow standby current. Control inputs include OE for
fast memory access and CE for power saving and device
selection. This makes these devices optimal for systems
that require low power or battery backup, and makes
memory expansion easy. The ultralow standby current
allows these devices to be used with capacitor backup as
well.
Features
Supply voltage range: 3.0 to 3.6 V
Access time: 70 ns (maximum)
Standby current: 0.8 μA (Ta
≤
60°C)
4.0 μA (Ta
≤
70°C)
Operating temperature: –10 to +70°C
Data retention voltage: 2.0 to 3.6 V
All I/O levels: CMOS compatible (0.8 V
CC
, 0.2 V
CC
)
Input/output shared function pins, 3-state output pins
No clock required (fully static circuits)
Package
28-pin SOP (450 mil) plastic package:
LC35V256EM-70W
28-pin TSOP (8
×
13.4 mm) plastic package:
LC35V256ET-70W
Package Dimensions
unit: mm
3187A-SOP28D
unit: mm
3221-TSOP28 (Type I)
LC35V256EM, ET-70W
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
256K (32K words
×
8 bits) SRAM
Control pins: OE and CE
CMOS IC
1
14
15
28
1
1
8
9
18.0
0
2
1.27
0.4
0.15
SANYO: SOP28D
[LC35V256EM-70W]
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
0.55
22
7
21
8
1
28
8.1
1
1
1
0
0.2
0.125
0
SANYO: TSOP28 (Type I)
[LC35V256ET-70W]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LC35V256EM | 256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| LC35V256EM-70W | 256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| LC35W1000BM | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BTS-10U | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BTS-70U | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LC35W1000BM | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BM-10U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
| LC35W1000BM-70U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
| LC35W1000BTS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
| LC35W1000BTS-10U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
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